Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes
Abstract
Point defects in wide-bandgap semiconductors offer spin and photonic qubits in a solid-state platform, making them important building blocks for quantum information processing, communication, and sensing. While these systems have the strong advantage of room-temperature operation, intrinsic electron-phonon interaction induces broad phonon-sideband emission and weak zero-phonon-line transitions, limiting efficient spin-photon interfaces and scalable photon-mediated interaction. Here, we introduce a controlled heterophase interface based on the remote epitaxy technique as a crystal heterogeneity-engineering strategy. While stacking faults are treated as imperfections to be eliminated, our results instead show that crystal-phase interfaces can provide an additional degree of freedom to engineer defect-phonon interaction beyond the intrinsic properties of a single crystal. In comparison with single-phase 4H-silicon carbide (SiC) membranes, Vsi in 3C/4H heterointerface SiC exhibits a drastic enhancement of zero-phonon optical transitions, with a substantially narrower zero-phonon linewidth of 4.71 meV even at room temperature. These results establish heterophase-interface engineering as an effective route for tailoring defect-phonon interactions and realizing bright room-temperature quantum emitters with enhanced zero-phonon optical transitions.
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BibTeX
@misc{michal2026engineering,
title = {{Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes}},
author = {Kirlie Iulius Figuera Michal and Jin Hee Lee and Keiju Sato and Takuji Maekawa and Je-Hyung Kim},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.33545},
eprint = {2609.33545},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.33545},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes
AU - Kirlie Iulius Figuera Michal
AU - Jin Hee Lee
AU - Keiju Sato
AU - Takuji Maekawa
AU - Je-Hyung Kim
PY - 2026
DA - 2026/09/27
PB - arXiv
DO - 10.48550/arxiv.2609.33545
UR - https://arxiv.org/abs/2609.33545
AB - Point defects in wide-bandgap semiconductors offer spin and photonic qubits in a solid-state platform, making them important building blocks for quantum information processing, communication, and sensing. While these systems have the strong advantage of room-temperature operation, intrinsic electron-phonon interaction induces broad phonon-sideband emission and weak zero-phonon-line transitions, limiting efficient spin-photon interfaces and scalable photon-mediated interaction. Here, we introduce a controlled heterophase interface based on the remote epitaxy technique as a crystal heterogeneity-engineering strategy. While stacking faults are treated as imperfections to be eliminated, our results instead show that crystal-phase interfaces can provide an additional degree of freedom to engineer defect-phonon interaction beyond the intrinsic properties of a single crystal. In comparison with single-phase 4H-silicon carbide (SiC) membranes, Vsi in 3C/4H heterointerface SiC exhibits a drastic enhancement of zero-phonon optical transitions, with a substantially narrower zero-phonon linewidth of 4.71 meV even at room temperature. These results establish heterophase-interface engineering as an effective route for tailoring defect-phonon interactions and realizing bright room-temperature quantum emitters with enhanced zero-phonon optical transitions.
ER -