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Peer-reviewedCC BYScience Advances

Multiscale insights into screw dislocation-driven growth mechanisms

1 more authors
6 affiliations
  1. 1Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
  2. 2School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
  3. 3Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Science, Beijing, 100190, PR China.
  4. 4Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
  5. 5Interior & Exterior Trim Department 1, Beijing Automotive Research Institute Co. Ltd., Beijing, 100021, China.
  6. 6State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. China.

Abstract

Spiral growth in two-dimensional (2D) materials has conventionally been explained by single screw dislocation mechanisms, yet a complete multiscale understanding remains elusive due to the intricate nature of screw dislocation structures. Here, we present a stabilization approach through metallic transition metal dichalcogenides (m-TMDs) overlayers on spiral semiconducting TMDs (s-TMDs), which enables unprecedentedly robust atomic-resolution imaging of screw dislocations in cross-sectional van der Waals heterostructures. Our multiscale investigations identify nanoscale substrate undulations as critical nucleation sites for screw dislocations and uncover a multi-screw dislocation-driven (MSDD) growth paradigm, characterized by periodic stress stripes with linear densities approaching ∼10 6 cm −1 . Furthermore, we establish that dislocation interactions govern stacking sequence reconstruction, while the kinetic competition among multiple screw dislocations determines the ultimate spiral architectures. These insights fundamentally transform our understanding of defect-mediated growth in 2D materials.

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BibTeX
@article{qiao2026multiscale,
  title = {{Multiscale insights into screw dislocation-driven growth mechanisms}},
  author = {Peiyu Qiao and Zhongshi Zhang and Bohui Xu and Pifu Gong and Xuanze Li and Yifan Wang and Lifeng Tian and Pei Liu and Jianyu Cao and Yuye Li and Qi Zhang and Chun Zhao and Xiangmin Meng},
  journal = {Science Advances},
  year = {2026},
  month = oct,
  doi = {10.1126/sciadv.aei7996},
  url = {https://www.science.org/doi/10.1126/sciadv.aei7996},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Multiscale insights into screw dislocation-driven growth mechanisms
AU  - Peiyu Qiao
AU  - Zhongshi Zhang
AU  - Bohui Xu
AU  - Pifu Gong
AU  - Xuanze Li
AU  - Yifan Wang
AU  - Lifeng Tian
AU  - Pei Liu
AU  - Jianyu Cao
AU  - Yuye Li
AU  - Qi Zhang
AU  - Chun Zhao
AU  - Xiangmin Meng
PY  - 2026
DA  - 2026/10/09
JO  - Science Advances
DO  - 10.1126/sciadv.aei7996
UR  - https://www.science.org/doi/10.1126/sciadv.aei7996
AB  - Spiral growth in two-dimensional (2D) materials has conventionally been explained by single screw dislocation mechanisms, yet a complete multiscale understanding remains elusive due to the intricate nature of screw dislocation structures. Here, we present a stabilization approach through metallic transition metal dichalcogenides (m-TMDs) overlayers on spiral semiconducting TMDs (s-TMDs), which enables unprecedentedly robust atomic-resolution imaging of screw dislocations in cross-sectional van der Waals heterostructures. Our multiscale investigations identify nanoscale substrate undulations as critical nucleation sites for screw dislocations and uncover a multi-screw dislocation-driven (MSDD) growth paradigm, characterized by periodic stress stripes with linear densities approaching ∼10 6 cm −1 . Furthermore, we establish that dislocation interactions govern stacking sequence reconstruction, while the kinetic competition among multiple screw dislocations determines the ultimate spiral architectures. These insights fundamentally transform our understanding of defect-mediated growth in 2D materials.
SN  - 2375-2548
ER  -