Ultra-stable laser with sub-Hz intrinsic linewidth using a silicon photonic chip
Abstract
Here, we demonstrate a novel optical self-injection-locking scheme integrated with a modulation-free laser frequency stabilization technique co-integrated with a compact vacuum-gap micro-Fabry-Perot cavity (uFP), with Q-factor of 3.46E9, to realize an ultra-stable laser with sub-Hz fundamental linewidth using a silicon photonic chip. The demonstrated electro-optic self-injection locking (EOSIL) chip suppresses a commercial DFB diode laser's frequency noise power spectral density by more than 110 dB at 1 Hz offset, approaching the theoretical thermal noise limit of the uFP cavity, and enables a laser fundamental linewidth of 58 mHz with a fractional frequency instability of 8.68E-13 at 1 sec averaging time. The chip is fabricated using the Advanced Micro Foundry standard silicon photonic process and occupies a footprint of 10 mm^2.
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BibTeX
@misc{idjadi2026ultrastable,
title = {{Ultra-stable laser with sub-Hz intrinsic linewidth using a silicon photonic chip}},
author = {Mohamad Hossein Idjadi and Haotian Cheng and Benjia Li and Tzu-Yung Huang and Kwangwoong Kim and Naijun Jin and Peter T. Rakich},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.22596},
eprint = {2610.22596},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.22596},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Ultra-stable laser with sub-Hz intrinsic linewidth using a silicon photonic chip
AU - Mohamad Hossein Idjadi
AU - Haotian Cheng
AU - Benjia Li
AU - Tzu-Yung Huang
AU - Kwangwoong Kim
AU - Naijun Jin
AU - Peter T. Rakich
PY - 2026
DA - 2026/10/15
PB - arXiv
DO - 10.48550/arxiv.2610.22596
UR - https://arxiv.org/abs/2610.22596
AB - Here, we demonstrate a novel optical self-injection-locking scheme integrated with a modulation-free laser frequency stabilization technique co-integrated with a compact vacuum-gap micro-Fabry-Perot cavity (uFP), with Q-factor of 3.46E9, to realize an ultra-stable laser with sub-Hz fundamental linewidth using a silicon photonic chip. The demonstrated electro-optic self-injection locking (EOSIL) chip suppresses a commercial DFB diode laser's frequency noise power spectral density by more than 110 dB at 1 Hz offset, approaching the theoretical thermal noise limit of the uFP cavity, and enables a laser fundamental linewidth of 58 mHz with a fractional frequency instability of 8.68E-13 at 1 sec averaging time. The chip is fabricated using the Advanced Micro Foundry standard silicon photonic process and occupies a footprint of 10 mm^2.
ER -