Y2CdX4 (X = S, Se, Te) Semiconductors: A First-Principles Study of Structural, Electronic, Optical, and Energy-Related Properties
Abstract
We present a comprehensive density functional theory (DFT) investigation of the structural, mechanical, electronic, optical, thermoelectric, and bonding properties of Y2CdX4 (X = S, Se, Te) compounds for potential optoelectronic and energy-conversion applications. Structural optimization reveals a systematic expansion of the equilibrium lattice parameters from S to Te. The calculated bulk moduli decrease from 83 GPa for Y2CdS4 to 68 GPa for Y2CdSe4 and 54 GPa for Y2CdTe4, indicating progressive lattice softening. Electronic band-structure calculations predict indirect band gaps of 2.42, 2.08, and 1.71 eV for Y2CdS4, Y2CdSe4, and Y2CdTe4, respectively, with further narrowing upon inclusion of spin-orbit coupling. The calculated dielectric functions, refractive indices, absorption coefficients, reflectivity, optical conductivities, and electron energy-loss spectra reveal systematic changes in optical response across the chalcogen series. The absorption onset shifts toward lower photon energies, from approximately 2.4 eV in Y2CdS4 to 1.7 eV in Y2CdTe4. Thermoelectric calculations indicate promising Seebeck coefficients and power factors, with Y2CdSe4 exhibiting a favorable balance of transport properties. Charge-density distributions, electron localization functions, and Bader charge analyses suggest increasing covalent bonding contributions from sulfide to telluride. These findings highlight the potential of Y2CdX4 compounds for tunable optoelectronic and energy-conversion applications.
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BibTeX
@misc{umar2026y2cdx4,
title = {{Y2CdX4 (X = S, Se, Te) Semiconductors: A First-Principles Study of Structural, Electronic, Optical, and Energy-Related Properties}},
author = {Faiq Umar and Sikander Azam},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.00167},
eprint = {2611.00167},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.00167},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Y2CdX4 (X = S, Se, Te) Semiconductors: A First-Principles Study of Structural, Electronic, Optical, and Energy-Related Properties
AU - Faiq Umar
AU - Sikander Azam
PY - 2026
DA - 2026/11/01
PB - arXiv
DO - 10.48550/arxiv.2611.00167
UR - https://arxiv.org/abs/2611.00167
AB - We present a comprehensive density functional theory (DFT) investigation of the structural, mechanical, electronic, optical, thermoelectric, and bonding properties of Y2CdX4 (X = S, Se, Te) compounds for potential optoelectronic and energy-conversion applications. Structural optimization reveals a systematic expansion of the equilibrium lattice parameters from S to Te. The calculated bulk moduli decrease from 83 GPa for Y2CdS4 to 68 GPa for Y2CdSe4 and 54 GPa for Y2CdTe4, indicating progressive lattice softening. Electronic band-structure calculations predict indirect band gaps of 2.42, 2.08, and 1.71 eV for Y2CdS4, Y2CdSe4, and Y2CdTe4, respectively, with further narrowing upon inclusion of spin-orbit coupling. The calculated dielectric functions, refractive indices, absorption coefficients, reflectivity, optical conductivities, and electron energy-loss spectra reveal systematic changes in optical response across the chalcogen series. The absorption onset shifts toward lower photon energies, from approximately 2.4 eV in Y2CdS4 to 1.7 eV in Y2CdTe4. Thermoelectric calculations indicate promising Seebeck coefficients and power factors, with Y2CdSe4 exhibiting a favorable balance of transport properties. Charge-density distributions, electron localization functions, and Bader charge analyses suggest increasing covalent bonding contributions from sulfide to telluride. These findings highlight the potential of Y2CdX4 compounds for tunable optoelectronic and energy-conversion applications.
ER -