CrSbSe3 Nanowire: A Platform for Near-Perfect Spin Selectivity.
- 1Department of Physics, Michigan Technological University, Houghton, Michigan49931, United States.
- 2Henes Center for Quantum Phenomena, Michigan Technological University, Houghton, Michigan49931, United States.
- 3Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan49931, United States.
Abstract
Spin-selective carrier transport in low-dimensional magnetic semiconductors is central to the development of next-generation spintronics. However, achieving robust spin-filtering together with long spin-coherence under nonequilibrium conditions remains a major challenge. Recently isolated by top-down exfoliation, the CrSbSe3 nanowire has emerged as a ferromagnetic semiconductor exhibiting enhanced coercivity compared to its bulk counterpart. Here, using first-principles density functional theory combined with quantum transport calculations, we demonstrate that the CrSbSe3 nanowire is a ferromagnetic semiconductor with a band gap of 1.26 eV. We identify superexchange interactions mediated by Se(p-orbitals) as the primary mechanism stabilizing its ferromagnetic order. Noncollinear spin calculations including spin-orbit coupling reveal an unchanged band topology near the Fermi level, suggesting long spin-coherence. Quantum transport calculations reveal robust spin-selective conduction, with the spin-injection factor approaching 100% for biases up to 0.6 V, independent of channel length, establishing the CrSbSe3 nanowire as a promising spin-filtering platform for spintronics.
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BibTeX
@article{horne2026crsbse3,
title = {{CrSbSe3 Nanowire: A Platform for Near-Perfect Spin Selectivity.}},
author = {Alyssa Horne and Yongmei M Jin and Ranjit Pati},
journal = {Nano letters},
year = {2026},
month = sep,
doi = {10.1021/acs.nanolett.6c02702},
url = {https://europepmc.org/article/MED/42916615},
note = {CC BY},
}
RIS
TY - JOUR
TI - CrSbSe3 Nanowire: A Platform for Near-Perfect Spin Selectivity.
AU - Alyssa Horne
AU - Yongmei M Jin
AU - Ranjit Pati
PY - 2026
DA - 2026/09/01
JO - Nano letters
DO - 10.1021/acs.nanolett.6c02702
UR - https://europepmc.org/article/MED/42916615
AB - Spin-selective carrier transport in low-dimensional magnetic semiconductors is central to the development of next-generation spintronics. However, achieving robust spin-filtering together with long spin-coherence under nonequilibrium conditions remains a major challenge. Recently isolated by top-down exfoliation, the CrSbSe3 nanowire has emerged as a ferromagnetic semiconductor exhibiting enhanced coercivity compared to its bulk counterpart. Here, using first-principles density functional theory combined with quantum transport calculations, we demonstrate that the CrSbSe3 nanowire is a ferromagnetic semiconductor with a band gap of 1.26 eV. We identify superexchange interactions mediated by Se(p-orbitals) as the primary mechanism stabilizing its ferromagnetic order. Noncollinear spin calculations including spin-orbit coupling reveal an unchanged band topology near the Fermi level, suggesting long spin-coherence. Quantum transport calculations reveal robust spin-selective conduction, with the spin-injection factor approaching 100% for biases up to 0.6 V, independent of channel length, establishing the CrSbSe3 nanowire as a promising spin-filtering platform for spintronics.
SN - 1530-6984
SN - 1530-6992
ER -