Enhanced Conductivity and Tunable Work Function in VOX Hole-Injection Layers via CsTFSI Doping for Efficient OLEDs
- 1School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
- 2Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Yanchang Road 149, Shanghai 200072, China
Abstract
Balanced charge injection is critical for improving the performance of organic light-emitting diodes (OLEDs). However, hole-injection layer (HIL) materials often suffer from low conductivity and mismatched energy levels, both of which limit hole injection. Herein, we develop an effective strategy using Cesium(I) Bis(trifluoromethanesulfonyl)imide (CsTFSI) to regulate the characteristics of VOX HIL. The energy level alignment and electrical conductivity can be readily tuned by adjusting the doping concentrations of CsTFSI. The optimized device performance is attributed to the synergistic effects of enhanced HIL conductivity and favorable energy level alignment. With fine-tuned HIL, the OLEDs achieved the maximum current efficiency of 67.68 cd A−1 and maximum external quantum efficiency of 19.67%, which represent improvements of 23.4% and 26.3% respectively compared to devices with undoped VOX HIL. This work highlights CsTFSI doping as a promising approach for developing high-performance VOX HILs.
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BibTeX
@article{feng2026enhanced,
title = {{Enhanced Conductivity and Tunable Work Function in VOX Hole-Injection Layers via CsTFSI Doping for Efficient OLEDs}},
author = {Zhiyin Feng and Wenqing Zhu and Qidi Lin and Ming Wu and Lu Huang},
journal = {Nanomaterials},
year = {2026},
month = nov,
doi = {10.3390/nano16211443},
url = {https://www.mdpi.com/2079-4991/16/21/1443},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Enhanced Conductivity and Tunable Work Function in VOX Hole-Injection Layers via CsTFSI Doping for Efficient OLEDs
AU - Zhiyin Feng
AU - Wenqing Zhu
AU - Qidi Lin
AU - Ming Wu
AU - Lu Huang
PY - 2026
DA - 2026/11/07
JO - Nanomaterials
DO - 10.3390/nano16211443
UR - https://www.mdpi.com/2079-4991/16/21/1443
AB - Balanced charge injection is critical for improving the performance of organic light-emitting diodes (OLEDs). However, hole-injection layer (HIL) materials often suffer from low conductivity and mismatched energy levels, both of which limit hole injection. Herein, we develop an effective strategy using Cesium(I) Bis(trifluoromethanesulfonyl)imide (CsTFSI) to regulate the characteristics of VOX HIL. The energy level alignment and electrical conductivity can be readily tuned by adjusting the doping concentrations of CsTFSI. The optimized device performance is attributed to the synergistic effects of enhanced HIL conductivity and favorable energy level alignment. With fine-tuned HIL, the OLEDs achieved the maximum current efficiency of 67.68 cd A−1 and maximum external quantum efficiency of 19.67%, which represent improvements of 23.4% and 26.3% respectively compared to devices with undoped VOX HIL. This work highlights CsTFSI doping as a promising approach for developing high-performance VOX HILs.
SN - 2079-4991
ER -