Charge-mediated remote epitaxy of Ga ₂ O ₃ via MoS ₂
5 affiliations
- 1School of Materials Science and Engineering, Kyungpook National University, Daegu, Republic of Korea 41566.
- 2Department of Physics and Astronomy, Seoul National University, Seoul, Republic of Korea 08826.
- 3School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, Republic of Korea 41566.
- 4KNU Advanced Material Research Institute, Kyungpook National University, Daegu, Republic of Korea 41566.
- 5Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea 03722.
Abstract
Remote epitaxy of the corundum phase α-Ga 2 O 3 is demonstrated through a domain-free, transfer-free monolayer of MoS 2 template synthesized on sapphire. Despite the intrinsic nonidealities of MoS 2 —specifically its thickness and polar bonding characteristics—for remote epitaxy, single-crystalline α-Ga 2 O 3 films are epitaxially grown on polycrystalline MoS 2 with crystallographic fidelity comparable to those grown directly on bare sapphire. This observation substantiates that the substrate lattice potential can still be effectively transmitted through the MoS 2 layer, facilitating epitaxial registry at the growth front. The resulting α-Ga 2 O 3 films exhibit crystal quality and surface morphology on par with those grown directly on bare sapphire. Moreover, a centimeter-scale, crack-free α-Ga 2 O 3 membrane was successfully exfoliated using a Ni stressor, underscoring the mechanical compatibility and scalability of the remote epitaxial process. Structural disordering observed with more-than-bilayer MoS 2 further corroborates the remote epitaxy mechanism. First-principles calculations reveal that interfacial interactions between the bottom S atoms of MoS 2 and the Al atoms of sapphire induce spatially modulated charge distributions on the MoS 2 surface, creating energetically favorable adsorption sites for Ga species. Collectively, these findings establish a mechanistic framework for charge-mediated remote epitaxy across polar interfaces and expand the design space for heterogeneous integration of transferable wide bandgap Ga 2 O 3 membranes in next-generation power electronics and optoelectronic devices.
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BibTeX
@article{lee2026chargemediated,
title = {{Charge-mediated remote epitaxy of Ga ₂ O ₃ via MoS ₂}},
author = {Gyeong Ryul Lee and Dong-Gwan Kim and Wonwoo Suh and Yoonho Choi and Donghan Kim and Mohammad M. Afandi and Juhui Oh and Hongsik Park and Celesta S. Chang and Hyun S. Kum and Taehoon Lee and Roy B. Chung},
journal = {Science Advances},
year = {2026},
month = oct,
doi = {10.1126/sciadv.aee9510},
url = {https://www.science.org/doi/10.1126/sciadv.aee9510},
note = {CC BY},
}
RIS
TY - JOUR
TI - Charge-mediated remote epitaxy of Ga ₂ O ₃ via MoS ₂
AU - Gyeong Ryul Lee
AU - Dong-Gwan Kim
AU - Wonwoo Suh
AU - Yoonho Choi
AU - Donghan Kim
AU - Mohammad M. Afandi
AU - Juhui Oh
AU - Hongsik Park
AU - Celesta S. Chang
AU - Hyun S. Kum
AU - Taehoon Lee
AU - Roy B. Chung
PY - 2026
DA - 2026/10/16
JO - Science Advances
DO - 10.1126/sciadv.aee9510
UR - https://www.science.org/doi/10.1126/sciadv.aee9510
AB - Remote epitaxy of the corundum phase α-Ga 2 O 3 is demonstrated through a domain-free, transfer-free monolayer of MoS 2 template synthesized on sapphire. Despite the intrinsic nonidealities of MoS 2 —specifically its thickness and polar bonding characteristics—for remote epitaxy, single-crystalline α-Ga 2 O 3 films are epitaxially grown on polycrystalline MoS 2 with crystallographic fidelity comparable to those grown directly on bare sapphire. This observation substantiates that the substrate lattice potential can still be effectively transmitted through the MoS 2 layer, facilitating epitaxial registry at the growth front. The resulting α-Ga 2 O 3 films exhibit crystal quality and surface morphology on par with those grown directly on bare sapphire. Moreover, a centimeter-scale, crack-free α-Ga 2 O 3 membrane was successfully exfoliated using a Ni stressor, underscoring the mechanical compatibility and scalability of the remote epitaxial process. Structural disordering observed with more-than-bilayer MoS 2 further corroborates the remote epitaxy mechanism. First-principles calculations reveal that interfacial interactions between the bottom S atoms of MoS 2 and the Al atoms of sapphire induce spatially modulated charge distributions on the MoS 2 surface, creating energetically favorable adsorption sites for Ga species. Collectively, these findings establish a mechanistic framework for charge-mediated remote epitaxy across polar interfaces and expand the design space for heterogeneous integration of transferable wide bandgap Ga 2 O 3 membranes in next-generation power electronics and optoelectronic devices.
SN - 2375-2548
ER -