High-Intense Gamma-Ray Emission from a Crystalline Undulator with Realistic Bending Profiles
Abstract
The development of compact and intense γ-ray sources in the MeV energy range remains a significant frontier in radiation physics, with profound implications for nuclear physics, medicine and applied science. In this work, we present a comprehensive numerical investigation of the photon emission probability and brilliance of a Crystalline Undulator (CU) based on a periodically bent Si(110) crystal. Our approach integrates realistic deformation profiles obtained via Finite Element Method simulations of a realistic sample, where bending is induced by patterned Si3N4 surface stressors. Relativistic molecular dynamics simulations, performed using the MBN Explorer software package, consider a 10 GeV positron beam consistent with the foreseen FACET-II facility specifications. Our results reveal a distinct undulator radiation peak in the 1.6-2.1 MeV range, well-separated from the broader channeling radiation background. We show that for an optimal aperture angle of 1/2γ, the source reaches a maximum peak brilliance of about 5×1022~photons/s/mm2/mrad2/0.1\%~BW. This performance is highly competitive with large-scale Gamma-Beam Systems and exceeds that of Inverse-Compton Scattering sources, confirming the potential of crystalline undulators as high-brilliance, compact light sources for the MeV domain.
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BibTeX
@misc{negrello2026highintense,
title = {{High-Intense Gamma-Ray Emission from a Crystalline Undulator with Realistic Bending Profiles}},
author = {R. Negrello and L. Malagutti and L. Bandiera and N. Canale and F. Cescato and P. Fedeli and V. Guidi and A. Mazzolari and G. Paternó and J. Reyes Garrido and M. Romagnoni and A. Sytov and A. V. Korol and A. V. Solov'yov},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.15101},
eprint = {2609.15101},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.15101},
}
RIS
TY - UNPB
TI - High-Intense Gamma-Ray Emission from a Crystalline Undulator with Realistic Bending Profiles
AU - R. Negrello
AU - L. Malagutti
AU - L. Bandiera
AU - N. Canale
AU - F. Cescato
AU - P. Fedeli
AU - V. Guidi
AU - A. Mazzolari
AU - G. Paternó
AU - J. Reyes Garrido
AU - M. Romagnoni
AU - A. Sytov
AU - A. V. Korol
AU - A. V. Solov'yov
PY - 2026
DA - 2026/09/14
PB - arXiv
DO - 10.48550/arxiv.2609.15101
UR - https://arxiv.org/abs/2609.15101
AB - The development of compact and intense γ-ray sources in the MeV energy range remains a significant frontier in radiation physics, with profound implications for nuclear physics, medicine and applied science. In this work, we present a comprehensive numerical investigation of the photon emission probability and brilliance of a Crystalline Undulator (CU) based on a periodically bent Si(110) crystal. Our approach integrates realistic deformation profiles obtained via Finite Element Method simulations of a realistic sample, where bending is induced by patterned Si_3N_4 surface stressors. Relativistic molecular dynamics simulations, performed using the MBN Explorer software package, consider a 10 GeV positron beam consistent with the foreseen FACET-II facility specifications. Our results reveal a distinct undulator radiation peak in the 1.6-2.1 MeV range, well-separated from the broader channeling radiation background. We show that for an optimal aperture angle of 1/2γ, the source reaches a maximum peak brilliance of about 5×10^22~photons/s/mm^2/mrad^2/0.1\%~BW. This performance is highly competitive with large-scale Gamma-Beam Systems and exceeds that of Inverse-Compton Scattering sources, confirming the potential of crystalline undulators as high-brilliance, compact light sources for the MeV domain.
ER -