Temperature Dependent Evolution of the Electronic Structure in EuZn2As2 across the Neel Transition
Abstract
Magnetoresistive materials have been tremendously important for the development of magnetic memory storage and spintronic devices. Recently, the antiferromagnetic EuX2Pn2 compounds, with X being a transition metal and Pn being a pnictogen, have seen intensive research interest due to their unusual anomalous Hall effect behavior and pronounced resistive anomaly near the Neel temperature (TN). These magnetotransport phenomena have been interpreted in the context of shortranged ferromagnetic Structuations, magnetic polaron formation, canted spin configurations, and temperature dependent metal insulator transitions in the electronic structure. Here, we report the observation of such a pronounced resistivity anomaly in EuZn2As2 near TN = 19 K. We demonstrate the suppression of this anomaly using applied magnetic fields, both in plane and out of plane. To further interpret the origin of the observed transport behavior, we studied the temperature dependent electronic structure using combined angle resolved photoemission spectroscopy (ARPES) and first principles density functional theory (DFT) calculations, which exhibits limited modifications to the bands across TN away from the Fermi energy. This lack of involvement of the electronic structure indicates a spin-scattering origin of the aforementioned transport properties, rather than a reconstruction of the Fermi surface.
Versions
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BibTeX
@misc{sprague2026temperature,
title = {{Temperature Dependent Evolution of the Electronic Structure in EuZn2As2 across the Neel Transition}},
author = {Milo Sprague and Anup Pradhan Sakhya and Barun Ghosh and Mazharul Islam Mondal and Arun K. Kumay and Himanshu Sheokand and Kapil Gope and Tetiana Romanova and Dariusz Kaczorowski and Arun Bansil and Madhab Neupane},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.32121},
eprint = {2609.32121},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.32121},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Temperature Dependent Evolution of the Electronic Structure in EuZn2As2 across the Neel Transition
AU - Milo Sprague
AU - Anup Pradhan Sakhya
AU - Barun Ghosh
AU - Mazharul Islam Mondal
AU - Arun K. Kumay
AU - Himanshu Sheokand
AU - Kapil Gope
AU - Tetiana Romanova
AU - Dariusz Kaczorowski
AU - Arun Bansil
AU - Madhab Neupane
PY - 2026
DA - 2026/09/26
PB - arXiv
DO - 10.48550/arxiv.2609.32121
UR - https://arxiv.org/abs/2609.32121
AB - Magnetoresistive materials have been tremendously important for the development of magnetic memory storage and spintronic devices. Recently, the antiferromagnetic EuX2Pn2 compounds, with X being a transition metal and Pn being a pnictogen, have seen intensive research interest due to their unusual anomalous Hall effect behavior and pronounced resistive anomaly near the Neel temperature (TN). These magnetotransport phenomena have been interpreted in the context of shortranged ferromagnetic Structuations, magnetic polaron formation, canted spin configurations, and temperature dependent metal insulator transitions in the electronic structure. Here, we report the observation of such a pronounced resistivity anomaly in EuZn2As2 near TN = 19 K. We demonstrate the suppression of this anomaly using applied magnetic fields, both in plane and out of plane. To further interpret the origin of the observed transport behavior, we studied the temperature dependent electronic structure using combined angle resolved photoemission spectroscopy (ARPES) and first principles density functional theory (DFT) calculations, which exhibits limited modifications to the bands across TN away from the Fermi energy. This lack of involvement of the electronic structure indicates a spin-scattering origin of the aforementioned transport properties, rather than a reconstruction of the Fermi surface.
ER -