Sidewall Metrology Protocol for Superconducting Qubit Devices
Abstract
Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
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BibTeX
@misc{garnæs2026sidewall,
title = {{Sidewall Metrology Protocol for Superconducting Qubit Devices}},
author = {Jørgen Garnæs and Henrik S. Guttesen and Astrid T. Rømer and Oscar Danielsson and Emily P. Duggan and Zhenhai Sun and Asen Lyubenov Georgiev and Li Wei Chang and Morten Kjaergaard and Mark Bieler and Lukas Grünhaupt and Sabbir A. Khan},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.26223},
eprint = {2610.26223},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.26223},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Sidewall Metrology Protocol for Superconducting Qubit Devices
AU - Jørgen Garnæs
AU - Henrik S. Guttesen
AU - Astrid T. Rømer
AU - Oscar Danielsson
AU - Emily P. Duggan
AU - Zhenhai Sun
AU - Asen Lyubenov Georgiev
AU - Li Wei Chang
AU - Morten Kjaergaard
AU - Mark Bieler
AU - Lukas Grünhaupt
AU - Sabbir A. Khan
PY - 2026
DA - 2026/10/19
PB - arXiv
DO - 10.48550/arxiv.2610.26223
UR - https://arxiv.org/abs/2610.26223
AB - Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
ER -