Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET
Abstract
Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to ν=2, two spin-polarized valley edge channels are brought into close proximity near a depleted side gate. We observe strong intervalley mixing, with a transition probability close to 1/2, indicating nearly complete equilibration between the two valley edge channels. In contrast, interchannel transport between edge channels with different spin orientations shows negligible transition probability, consistent with suppressed spin-flip scattering in silicon. These results demonstrate that intervalley coupling at a Si/SiO2 interface can provide a beam-splitter-like operation for copropagating valley edge channels, establishing a key building block toward compact silicon quantum Hall interferometers.
Versions
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BibTeX
@misc{yamahata2026strong,
title = {{Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET}},
author = {Gento Yamahata and Takase Shimizu},
howpublished = {arXiv},
year = {2026},
month = jul,
doi = {10.48550/arxiv.2607.15675},
eprint = {2607.15675},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2607.15675},
}
RIS
TY - UNPB
TI - Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET
AU - Gento Yamahata
AU - Takase Shimizu
PY - 2026
DA - 2026/07/17
PB - arXiv
DO - 10.48550/arxiv.2607.15675
UR - https://arxiv.org/abs/2607.15675
AB - Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to ν=2, two spin-polarized valley edge channels are brought into close proximity near a depleted side gate. We observe strong intervalley mixing, with a transition probability close to 1/2, indicating nearly complete equilibration between the two valley edge channels. In contrast, interchannel transport between edge channels with different spin orientations shows negligible transition probability, consistent with suppressed spin-flip scattering in silicon. These results demonstrate that intervalley coupling at a Si/SiO_2 interface can provide a beam-splitter-like operation for copropagating valley edge channels, establishing a key building block toward compact silicon quantum Hall interferometers.
ER -