Domain-engineered ferroelectric BiFeO3 thin films for efficient bias-free THz emission
Abstract
Ultrashort light pulses can drive transient photocurrents in solids, the basis of modern terahertz (THz) emitters. Ferroelectrics have recently emerged in this context as sources that require neither the bias voltage of photoconductive antennas nor the magnetic field of spintronic emitters, yet the ultrafast photocurrent generating the emission has remained debated. Here, we resolve this question in epitaxial BiFeO3 thin films with engineered ferroelectric domain configurations, from single-domain to periodic stripe patterns. The stripe-domain film emits a THz field four times stronger than the single-domain configurations, reaching about half the output of a metallic spintronic reference emitter while remaining unsaturated at our highest excitation fluences. Resolving the emitted THz field in amplitude and phase as a function of the pump light polarization and the crystal orientation, we separate the coexisting photocurrents by their symmetry. This identifies the ultrafast screening of the ferroelectric polarization by photocarriers as the dominant emission mechanism in the in-plane-polarized films, enhanced in multidomain films by the strong built-in fields at the domain walls, while an out-of-plane polarization favors the bulk photovoltaic current. Our results establish the ferroelectric domain configuration as a design parameter setting both the strength and the microscopic origin of light-driven THz emission.
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BibTeX
@misc{hadi2026domainengineered,
title = {{Domain-engineered ferroelectric BiFeO$_3$ thin films for efficient bias-free THz emission}},
author = {Z. Abdul Hadi and N. Rezi and Maurizio Monti and G. Vaudel and A Abdelsamie and C. Carrétéro and Daniel Sando and M Viret and V. Garcia and S Fusil and Mads C. Weber and P. Ruello and V. Juvé},
howpublished = {HAL},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.01357},
eprint = {2610.01357},
archivePrefix = {arXiv},
url = {https://hal.science/hal-05783093v1},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Domain-engineered ferroelectric BiFeO_3 thin films for efficient bias-free THz emission
AU - Z. Abdul Hadi
AU - N. Rezi
AU - Maurizio Monti
AU - G. Vaudel
AU - A Abdelsamie
AU - C. Carrétéro
AU - Daniel Sando
AU - M Viret
AU - V. Garcia
AU - S Fusil
AU - Mads C. Weber
AU - P. Ruello
AU - V. Juvé
PY - 2026
DA - 2026/10/01
PB - HAL
DO - 10.48550/arxiv.2610.01357
UR - https://hal.science/hal-05783093v1
AB - Ultrashort light pulses can drive transient photocurrents in solids, the basis of modern terahertz (THz) emitters. Ferroelectrics have recently emerged in this context as sources that require neither the bias voltage of photoconductive antennas nor the magnetic field of spintronic emitters, yet the ultrafast photocurrent generating the emission has remained debated. Here, we resolve this question in epitaxial BiFeO_3 thin films with engineered ferroelectric domain configurations, from single-domain to periodic stripe patterns. The stripe-domain film emits a THz field four times stronger than the single-domain configurations, reaching about half the output of a metallic spintronic reference emitter while remaining unsaturated at our highest excitation fluences. Resolving the emitted THz field in amplitude and phase as a function of the pump light polarization and the crystal orientation, we separate the coexisting photocurrents by their symmetry. This identifies the ultrafast screening of the ferroelectric polarization by photocarriers as the dominant emission mechanism in the in-plane-polarized films, enhanced in multidomain films by the strong built-in fields at the domain walls, while an out-of-plane polarization favors the bulk photovoltaic current. Our results establish the ferroelectric domain configuration as a design parameter setting both the strength and the microscopic origin of light-driven THz emission.
ER -