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PreprintCC BY 4.0arXiv

Photonic and Electronic Interaction of TMD-Hybridized ZnO Nanowire Lasers

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Abstract

Semiconductor nanowire lasers are promising on-chip coherent light sources for photonic integrated circuits, but integration inevitably places them in contact with other materials, thereby changing their properties upon hybridization. In this study, we examine the photonic and electronic coupling between single ZnO nanowire lasers and TMDs. Using deterministic nanomanipulation, we first hybridized the same nanowire first with a WS2 monolayer and then with a MoS2 monolayer. The respective lasing threshold rises, the emission is strongly quenched at high pump power densities, and the mode envelope blueshifts. Upon hybridization with bilayer, trilayer, and bulk MoS2, lasing is fully suppressed. Finite-Difference Eigenmode simulations show that the TMD absorbs part of the evanescent field. Because this absorption is wavelength dependent, it also removes modes from the low-energy flank of the envelope, which accounts for small difference between the two monolayers, while the blueshift itself follows the increase of the carrier density at threshold. Density functional theory calculations that include the interface dipole predict a type-I alignment at the ideal ZnO(101̅0)/TMD interface, which turns into type~II for a moderately reduced dipole, as expected for hydroxylated facets in air. In both cases, holes are transferred from the nanowire into the TMD and removed from the gain medium. Evanescent absorption and hole transfer thus jointly suppress lasing, and both must be accounted for when integrating nanowire lasers with 2D materials.

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BibTeX
@misc{willems2026photonic,
  title = {{Photonic and Electronic Interaction of TMD-Hybridized ZnO Nanowire Lasers}},
  author = {Moritz Willems and Edwin Eobaldt and Alexander Zaunick and Aurelia Eberhard and Maximilian Tomoscheit and Lukas Raam Jäger and Xiao Chen and Preeti Sharma and Nicolas Tancogne-Dejean and Antony George and Andrey Turchanin and Silvana Botti and Giancarlo Soavi and Carsten Ronning},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.06740},
  eprint = {2611.06740},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.06740},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Photonic and Electronic Interaction of TMD-Hybridized ZnO Nanowire Lasers
AU  - Moritz Willems
AU  - Edwin Eobaldt
AU  - Alexander Zaunick
AU  - Aurelia Eberhard
AU  - Maximilian Tomoscheit
AU  - Lukas Raam Jäger
AU  - Xiao Chen
AU  - Preeti Sharma
AU  - Nicolas Tancogne-Dejean
AU  - Antony George
AU  - Andrey Turchanin
AU  - Silvana Botti
AU  - Giancarlo Soavi
AU  - Carsten Ronning
PY  - 2026
DA  - 2026/11/04
PB  - arXiv
DO  - 10.48550/arxiv.2611.06740
UR  - https://arxiv.org/abs/2611.06740
AB  - Semiconductor nanowire lasers are promising on-chip coherent light sources for photonic integrated circuits, but integration inevitably places them in contact with other materials, thereby changing their properties upon hybridization. In this study, we examine the photonic and electronic coupling between single ZnO nanowire lasers and TMDs. Using deterministic nanomanipulation, we first hybridized the same nanowire first with a WS_2 monolayer and then with a MoS_2 monolayer. The respective lasing threshold rises, the emission is strongly quenched at high pump power densities, and the mode envelope blueshifts. Upon hybridization with bilayer, trilayer, and bulk MoS_2, lasing is fully suppressed. Finite-Difference Eigenmode simulations show that the TMD absorbs part of the evanescent field. Because this absorption is wavelength dependent, it also removes modes from the low-energy flank of the envelope, which accounts for small difference between the two monolayers, while the blueshift itself follows the increase of the carrier density at threshold. Density functional theory calculations that include the interface dipole predict a type-I alignment at the ideal ZnO(101̅0)/TMD interface, which turns into type~II for a moderately reduced dipole, as expected for hydroxylated facets in air. In both cases, holes are transferred from the nanowire into the TMD and removed from the gain medium. Evanescent absorption and hole transfer thus jointly suppress lasing, and both must be accounted for when integrating nanowire lasers with 2D materials.
ER  -