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Peer-reviewedPublisher termsMaterials Science in Semiconductor Processing

N-doped Ge-rich GST film crystallization via C-AFM-generated electrical pulses

  • Chaymaa Boujrouf
  • Marc Bocquet
  • Siham Hassak
  • Maxime Bertoglio
  • Loïc Patout
  • Yannick Le Friec
  • Alain Portavoce
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Cite

BibTeXRIS
BibTeX
@article{boujrouf2026ndoped,
  title = {{N-doped Ge-rich GST film crystallization via C-AFM-generated electrical pulses}},
  author = {Chaymaa Boujrouf and Marc Bocquet and Siham Hassak and Maxime Bertoglio and Loïc Patout and Yannick Le Friec and Alain Portavoce},
  journal = {Materials Science in Semiconductor Processing},
  year = {2026},
  month = oct,
  doi = {10.1016/j.mssp.2026.110542},
  url = {https://hal.science/hal-05786461v1},
}
RIS
TY  - JOUR
TI  - N-doped Ge-rich GST film crystallization via C-AFM-generated electrical pulses
AU  - Chaymaa Boujrouf
AU  - Marc Bocquet
AU  - Siham Hassak
AU  - Maxime Bertoglio
AU  - Loïc Patout
AU  - Yannick Le Friec
AU  - Alain Portavoce
PY  - 2026
DA  - 2026/10/08
JO  - Materials Science in Semiconductor Processing
DO  - 10.1016/j.mssp.2026.110542
UR  - https://hal.science/hal-05786461v1
SN  - 1369-8001
ER  -