III-V antiphase boundaries are not generated by Si or Ge substrate step edges

Abstract

We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine key aspects including wetting behavior, atomic configurations at the hetero-interface, substrate passivation, and the stability of antiphase boundaries (APBs). By synthesizing these findings with pioneering studies, we propose a refined description of antiphase boundaries formation. Our analysis shows that hetero-interface formation is dictated by substrate terrace reconstruction, demonstrating that APBs are not generated at monoatomic step edges. This generalized III-V/IV growth framework provides new insights for the integration of III-V semiconductors on group-IV platforms and, more broadly, for valence-mismatched heteroepitaxy.

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BibTeX RIS

BibTeX

@misc{cornet2026iiiv,
  title = {{III-V antiphase boundaries are not generated by Si or Ge substrate step edges}},
  author = {Charles Cornet and Sreejith Pallikkara Chandrasekharan and Audrey Gilbert and Milan Silvestre and Rozenn Bernard and Pascal Turban and Gilles Patriarche and Eric Tournie and Laurent Pedesseau and Jean-Baptiste Rodriguez},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.24792},
  eprint = {2609.24792},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.24792},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - III-V antiphase boundaries are not generated by Si or Ge substrate step edges
AU  - Charles Cornet
AU  - Sreejith Pallikkara Chandrasekharan
AU  - Audrey Gilbert
AU  - Milan Silvestre
AU  - Rozenn Bernard
AU  - Pascal Turban
AU  - Gilles Patriarche
AU  - Eric Tournie
AU  - Laurent Pedesseau
AU  - Jean-Baptiste Rodriguez
PY  - 2026
DA  - 2026/09/21
PB  - arXiv
DO  - 10.48550/arxiv.2609.24792
UR  - https://arxiv.org/abs/2609.24792
AB  - We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine key aspects including wetting behavior, atomic configurations at the hetero-interface, substrate passivation, and the stability of antiphase boundaries (APBs). By synthesizing these findings with pioneering studies, we propose a refined description of antiphase boundaries formation. Our analysis shows that hetero-interface formation is dictated by substrate terrace reconstruction, demonstrating that APBs are not generated at monoatomic step edges. This generalized III-V/IV growth framework provides new insights for the integration of III-V semiconductors on group-IV platforms and, more broadly, for valence-mismatched heteroepitaxy.
ER  -

Abstract

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