Comparative Effects of O2 Plasma and Thermal Annealing on the Physicochemical and Electrical Characteristics of iCVD pV3D3 Dielectric Films
- 1Department of Semiconductor Engineering, Seoul National University of Science & Technology, Seoul 01811, Republic of Korea
- 2School of Electronics and Electrical Engineering, Dankook University, Yongin 16890, Republic of Korea
- 3Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, 1048 Blindern, NO-0316 Oslo, Norway
Abstract
Functional polymers are increasingly considered for semiconductor integration, but their properties may be altered by plasma and thermal processing. Here, 50 nm thick iCVD-grown pV3D3 dielectric films were subjected to O2 plasma treatment and thermal annealing at 250 and 300 °C, and the resulting physicochemical and electrical changes were comparatively investigated. O2 plasma treatment generated C–O and O–C=O surface bonding states and shifted the Si 2p spectrum toward higher binding energy, while the RMS roughness remained below 0.5 nm. In contrast, thermal annealing caused comparatively limited surface-chemical changes but substantially altered the electrical response. In particular, the 300 °C-annealed sample exhibited strongly suppressed capacitance and a pronounced deviation from the linear resistance–length relationship observed for the reference and lower-temperature conditions. These results indicate that plasma treatment predominantly modifies the near-surface chemistry of pV3D3, whereas elevated thermal processing can induce electrical changes that are not fully captured by surface-sensitive characterization. The combined analysis highlights the importance of thermal-budget control when integrating pV3D3 into semiconductor process flows.
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BibTeX
@article{sung2026comparative,
title = {{Comparative Effects of O2 Plasma and Thermal Annealing on the Physicochemical and Electrical Characteristics of iCVD pV3D3 Dielectric Films}},
author = {Dong Yun Sung and Ji Yun Lee and Seo Yeon Choi and Hyung Jun Kim and Sun Jae Kim and Min Ju Kim and Sarah Eunkyung Kim and Jong Kyung Park and Seul Ki Hong},
journal = {Polymers},
year = {2026},
month = oct,
doi = {10.3390/polym18212700},
url = {https://www.mdpi.com/2073-4360/18/21/2700},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Comparative Effects of O2 Plasma and Thermal Annealing on the Physicochemical and Electrical Characteristics of iCVD pV3D3 Dielectric Films
AU - Dong Yun Sung
AU - Ji Yun Lee
AU - Seo Yeon Choi
AU - Hyung Jun Kim
AU - Sun Jae Kim
AU - Min Ju Kim
AU - Sarah Eunkyung Kim
AU - Jong Kyung Park
AU - Seul Ki Hong
PY - 2026
DA - 2026/10/31
JO - Polymers
DO - 10.3390/polym18212700
UR - https://www.mdpi.com/2073-4360/18/21/2700
AB - Functional polymers are increasingly considered for semiconductor integration, but their properties may be altered by plasma and thermal processing. Here, 50 nm thick iCVD-grown pV3D3 dielectric films were subjected to O2 plasma treatment and thermal annealing at 250 and 300 °C, and the resulting physicochemical and electrical changes were comparatively investigated. O2 plasma treatment generated C–O and O–C=O surface bonding states and shifted the Si 2p spectrum toward higher binding energy, while the RMS roughness remained below 0.5 nm. In contrast, thermal annealing caused comparatively limited surface-chemical changes but substantially altered the electrical response. In particular, the 300 °C-annealed sample exhibited strongly suppressed capacitance and a pronounced deviation from the linear resistance–length relationship observed for the reference and lower-temperature conditions. These results indicate that plasma treatment predominantly modifies the near-surface chemistry of pV3D3, whereas elevated thermal processing can induce electrical changes that are not fully captured by surface-sensitive characterization. The combined analysis highlights the importance of thermal-budget control when integrating pV3D3 into semiconductor process flows.
SN - 2073-4360
ER -