Skip to content
DraconiticResearch
Search Sources API
203,203 studies31 sourcesUpdated 59 min ago
PreprintarXiv licencearXiv

Floquet Topological Spin-Valley-Layertronics on a Layered Dice Lattice

Abstract

The recent discovery of long-sought dice flat band in layered YCl electride has opened up rich possibilities of correlation and topological physics in dice lattice systems [Nature Communications 17, 2213 (2026), arXiv:2509.05958]. Here, we reveal a plethora of distinctive correlated topological phases in a generic layered dice lattice system at band filling of ν=4 under on-site Hubbard interactions: (i) the system is an intrinsic sublattice anti-ferromagnetic (AFM) quantum spin-valley Hall insulator; (ii) a circularly polarized light (CPL) drives the AFM spin-valley insulator into a Floquet odd-parity f-wave altermagnet(AM) insulator; (iii) a vertical displacement field turns the Floquet f-wave AM insulator into a spin-valley-layer-polarized Chern insulator, with the sign of spin, valley and Chern number all controlled by the direction of the displacement field. Our results not only establish the layered dice lattice as a versatile platform for electrically switchable magnetic and topological phases, but also provide an all-electrical scheme for integrated spin-valley-layertronics for non-volatile information storage and processing.

Related

  1. Nonlinearity-Induced Suppression of Dissipation in Bath-Coupled Floquet Topological Insulators
    Bhoomija Chaurasia, Sebabrata Mukherjee
    arXivPreprintarXiv licenceFull textCondensed matterOptics & photonicsarXiv
  2. Simulating multi-node Weyl semimetals in a Mixed Floquet lattice
    Goutham Vinjamuri, Ashutosh Dubey, Ankur Das
    arXivPreprintCC0Full textCondensed matterarXiv
  3. Optical control of electrons in a Floquet topological insulator
    Daniel Lesko, Tobias Weitz, Simon Wittigschlager +4
    Nature PhysicsPeer-reviewedCC BYFull text23 citedAtomic, molecular & optical physicsCondensed matterOpenAlex
  4. Topological charges and parity selection at Floquet quasienergy degeneracies
    Sigmund Kohler, David Guéry-Odelin
    arXivPreprintCC BY 4.0Full textCondensed matterQuantum physics & quantum informationarXiv
  5. Quantized Transport in Floquet Topological Insulators
    Rekha Kumari, Manas Kulkarni, Abhishek Dhar
    arXivPreprintarXiv licenceFull textCondensed matterQuantum physics & quantum informationarXiv
BibTeX
@misc{zhong2026floquet,
  title = {{Floquet Topological Spin-Valley-Layertronics on a Layered Dice Lattice}},
  author = {Jianqi Zhong and Teng-Fei Ying and Jinyu Zou and Benjamin T. Zhou},
  howpublished = {arXiv},
  year = {2026},
  month = aug,
  doi = {10.48550/arxiv.2608.29833},
  eprint = {2608.29833},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2608.29833},
}
RIS
TY  - UNPB
TI  - Floquet Topological Spin-Valley-Layertronics on a Layered Dice Lattice
AU  - Jianqi Zhong
AU  - Teng-Fei Ying
AU  - Jinyu Zou
AU  - Benjamin T. Zhou
PY  - 2026
DA  - 2026/08/30
PB  - arXiv
DO  - 10.48550/arxiv.2608.29833
UR  - https://arxiv.org/abs/2608.29833
AB  - The recent discovery of long-sought dice flat band in layered YCl electride has opened up rich possibilities of correlation and topological physics in dice lattice systems [Nature Communications 17, 2213 (2026), arXiv:2509.05958]. Here, we reveal a plethora of distinctive correlated topological phases in a generic layered dice lattice system at band filling of ν=4 under on-site Hubbard interactions: (i) the system is an intrinsic sublattice anti-ferromagnetic (AFM) quantum spin-valley Hall insulator; (ii) a circularly polarized light (CPL) drives the AFM spin-valley insulator into a Floquet odd-parity f-wave altermagnet(AM) insulator; (iii) a vertical displacement field turns the Floquet f-wave AM insulator into a spin-valley-layer-polarized Chern insulator, with the sign of spin, valley and Chern number all controlled by the direction of the displacement field. Our results not only establish the layered dice lattice as a versatile platform for electrically switchable magnetic and topological phases, but also provide an all-electrical scheme for integrated spin-valley-layertronics for non-volatile information storage and processing.
ER  -