Antisymmetric spontaneous resistivity anisotropy due to hard-axis collapse in polycrystalline Co thin films
Abstract
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system exhibits distinct remanent resistance levels in both the in-plane longitudinal and transverse voltage responses. In particular, the planar Hall resistance shows multiple stable and reproducible levels at room temperature, enabling the identification of at least three remanent states that can be distinguished and used for information storage. These resistance levels originate from non-uniform magnetic configurations stabilized after the application and removal of the external magnetic field in the hard-axis region. Since this phenomenon remains largely unexplored, we present an incipient study addressing its potential implications from an applied-physics perspective. The observation of such behavior in polycrystalline Co thin films grown on Si substrates suggests a simple and low-cost platform for spintronic memory and sensing devices based on the remanent planar Hall effect.
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BibTeX
@misc{fernandes2026antisymmetric,
title = {{Antisymmetric spontaneous resistivity anisotropy due to hard-axis collapse in polycrystalline Co thin films}},
author = {Y. Fernandes and J. Geshev and A. M. H. de Andrade and A. D. C. Viegas},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2605.27099},
eprint = {2605.27099},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2605.27099},
note = {CC0},
}
RIS
TY - UNPB
TI - Antisymmetric spontaneous resistivity anisotropy due to hard-axis collapse in polycrystalline Co thin films
AU - Y. Fernandes
AU - J. Geshev
AU - A. M. H. de Andrade
AU - A. D. C. Viegas
PY - 2026
DA - 2026/09/17
PB - arXiv
DO - 10.48550/arxiv.2605.27099
UR - https://arxiv.org/abs/2605.27099
AB - We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system exhibits distinct remanent resistance levels in both the in-plane longitudinal and transverse voltage responses. In particular, the planar Hall resistance shows multiple stable and reproducible levels at room temperature, enabling the identification of at least three remanent states that can be distinguished and used for information storage. These resistance levels originate from non-uniform magnetic configurations stabilized after the application and removal of the external magnetic field in the hard-axis region. Since this phenomenon remains largely unexplored, we present an incipient study addressing its potential implications from an applied-physics perspective. The observation of such behavior in polycrystalline Co thin films grown on Si substrates suggests a simple and low-cost platform for spintronic memory and sensing devices based on the remanent planar Hall effect.
ER -