Pressure engineering of the excitonic moiré-potential landscape and exciton-charge interplay in semiconductor moiré superlattices
Abstract
Semiconductor moiré superlattices, owing to strongly bound excitons and pronounced electronic correlation, have emerged as an intriguing solid platform for exploring correlated bosonic phenomena, where the moiré potential landscape plays a central role. Hydrostatic pressure allows continuous, in-situ tuning of this landscape, but remains underexplored because of experimental challenges. Here we integrate a diamond anvil pressure cell with high quality dual gated WSe2/WS2 twisted bilayers and perform cryogenic optical spectroscopy. We observe distinct pressure evolutions of moiré intralayer excitons, which reveal drastic modulation of the excitonic moiré-potential landscape captured by a continuum model and suggest the capability of engineering the exciton-band topology. Moreover, we demonstrate efficient pressure control over the interplay between charges and both intralayer and interlayer excitons: the intralayer charge-transfer exciton becomes less sensitive to doping, likely due to reduced charge-transfer character; in contrast, the interlayer exciton exhibits enhanced exciton-charge repulsion. Our results establish hydrostatic pressure as a powerful tuning knob for engineering bosonic quasiparticles and Bose-Fermi interactions in moiré materials.
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BibTeX
@misc{li2026pressure,
title = {{Pressure engineering of the excitonic moiré-potential landscape and exciton-charge interplay in semiconductor moiré superlattices}},
author = {Wenbing Li and Tianhao Yue and Wenjian Su and Zhexu Shan and Chen Xu and Jichen Zhou and Kenji Watanabe and Takashi Taniguchi and Liguo Ma and Yuanfeng Xu and Shiyao Zhu and Yang Gao and Yanhao Tang},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.19542},
eprint = {2610.19542},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.19542},
}
RIS
TY - UNPB
TI - Pressure engineering of the excitonic moiré-potential landscape and exciton-charge interplay in semiconductor moiré superlattices
AU - Wenbing Li
AU - Tianhao Yue
AU - Wenjian Su
AU - Zhexu Shan
AU - Chen Xu
AU - Jichen Zhou
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - Liguo Ma
AU - Yuanfeng Xu
AU - Shiyao Zhu
AU - Yang Gao
AU - Yanhao Tang
PY - 2026
DA - 2026/10/14
PB - arXiv
DO - 10.48550/arxiv.2610.19542
UR - https://arxiv.org/abs/2610.19542
AB - Semiconductor moiré superlattices, owing to strongly bound excitons and pronounced electronic correlation, have emerged as an intriguing solid platform for exploring correlated bosonic phenomena, where the moiré potential landscape plays a central role. Hydrostatic pressure allows continuous, in-situ tuning of this landscape, but remains underexplored because of experimental challenges. Here we integrate a diamond anvil pressure cell with high quality dual gated WSe2/WS2 twisted bilayers and perform cryogenic optical spectroscopy. We observe distinct pressure evolutions of moiré intralayer excitons, which reveal drastic modulation of the excitonic moiré-potential landscape captured by a continuum model and suggest the capability of engineering the exciton-band topology. Moreover, we demonstrate efficient pressure control over the interplay between charges and both intralayer and interlayer excitons: the intralayer charge-transfer exciton becomes less sensitive to doping, likely due to reduced charge-transfer character; in contrast, the interlayer exciton exhibits enhanced exciton-charge repulsion. Our results establish hydrostatic pressure as a powerful tuning knob for engineering bosonic quasiparticles and Bose-Fermi interactions in moiré materials.
ER -