High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing
Abstract
Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV centers. The formation yield strongly depends on implantation energy and fluence, reaching up to 33% at energies of 35 and 70 keV. This method, therefore, enables the efficient creation of GeV centers within a small, well-defined local sample volume and offers a potential means of incorporating them into photonic structures.
Versions
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BibTeX
@misc{dietel2026high,
title = {{High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing}},
author = {S. Dietel and E. Scattolo and J. Fuhrmann and L. Kazak and A. Cian and E. Missale and D. Giubertoni and F. Jelezko},
howpublished = {arXiv},
year = {2026},
month = jun,
doi = {10.48550/arxiv.2606.28528},
eprint = {2606.28528},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2606.28528},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing
AU - S. Dietel
AU - E. Scattolo
AU - J. Fuhrmann
AU - L. Kazak
AU - A. Cian
AU - E. Missale
AU - D. Giubertoni
AU - F. Jelezko
PY - 2026
DA - 2026/06/26
PB - arXiv
DO - 10.48550/arxiv.2606.28528
UR - https://arxiv.org/abs/2606.28528
AB - Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV centers. The formation yield strongly depends on implantation energy and fluence, reaching up to 33% at energies of 35 and 70 keV. This method, therefore, enables the efficient creation of GeV centers within a small, well-defined local sample volume and offers a potential means of incorporating them into photonic structures.
ER -