Reaction-induced Localized Annealing for On-chip Materials Discovery
Abstract
On-chip thermal processing is a key technology for materials discovery across all disciplines of the natural sciences. Here, we present a microfabricated heat-delivery platform that enables reaction-induced localized on-chip annealing up to 1400°C. A buried reactive multilayer combined with a nanometric diffusion barrier provide ultra-fast heating and quenching rates on the order of 106°C s−1 as illustrated by the generation of ultra-high aspect ratio microstructures during rapid-solidification and the stabilization of dopant-free tetragonal zirconia at room temperature. Rapid kinetics also enable the observation of transient states of capillary-driven hole collapse in melts. Our work expands localized high-temperature processing routes and offers a material-independent approach for rapid screening of multidimensional nanomaterials on and off-equilibrium.
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BibTeX
@misc{toncich2026reactioninduced,
title = {{Reaction-induced Localized Annealing for On-chip Materials Discovery}},
author = {Nensi Toncich and Nerea Abando and Henning Galinski and Frans Spaepen and Ralph Spolenak},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.27355},
eprint = {2610.27355},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.27355},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Reaction-induced Localized Annealing for On-chip Materials Discovery
AU - Nensi Toncich
AU - Nerea Abando
AU - Henning Galinski
AU - Frans Spaepen
AU - Ralph Spolenak
PY - 2026
DA - 2026/10/19
PB - arXiv
DO - 10.48550/arxiv.2610.27355
UR - https://arxiv.org/abs/2610.27355
AB - On-chip thermal processing is a key technology for materials discovery across all disciplines of the natural sciences. Here, we present a microfabricated heat-delivery platform that enables reaction-induced localized on-chip annealing up to 1400°C. A buried reactive multilayer combined with a nanometric diffusion barrier provide ultra-fast heating and quenching rates on the order of 10^6°C s^−1 as illustrated by the generation of ultra-high aspect ratio microstructures during rapid-solidification and the stabilization of dopant-free tetragonal zirconia at room temperature. Rapid kinetics also enable the observation of transient states of capillary-driven hole collapse in melts. Our work expands localized high-temperature processing routes and offers a material-independent approach for rapid screening of multidimensional nanomaterials on and off-equilibrium.
ER -