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PreprintCC BY-NC-ND 4.0arXiv

Reaction-induced Localized Annealing for On-chip Materials Discovery

Abstract

On-chip thermal processing is a key technology for materials discovery across all disciplines of the natural sciences. Here, we present a microfabricated heat-delivery platform that enables reaction-induced localized on-chip annealing up to 1400°C. A buried reactive multilayer combined with a nanometric diffusion barrier provide ultra-fast heating and quenching rates on the order of 106°C s−1 as illustrated by the generation of ultra-high aspect ratio microstructures during rapid-solidification and the stabilization of dopant-free tetragonal zirconia at room temperature. Rapid kinetics also enable the observation of transient states of capillary-driven hole collapse in melts. Our work expands localized high-temperature processing routes and offers a material-independent approach for rapid screening of multidimensional nanomaterials on and off-equilibrium.

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BibTeX
@misc{toncich2026reactioninduced,
  title = {{Reaction-induced Localized Annealing for On-chip Materials Discovery}},
  author = {Nensi Toncich and Nerea Abando and Henning Galinski and Frans Spaepen and Ralph Spolenak},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.27355},
  eprint = {2610.27355},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.27355},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - UNPB
TI  - Reaction-induced Localized Annealing for On-chip Materials Discovery
AU  - Nensi Toncich
AU  - Nerea Abando
AU  - Henning Galinski
AU  - Frans Spaepen
AU  - Ralph Spolenak
PY  - 2026
DA  - 2026/10/19
PB  - arXiv
DO  - 10.48550/arxiv.2610.27355
UR  - https://arxiv.org/abs/2610.27355
AB  - On-chip thermal processing is a key technology for materials discovery across all disciplines of the natural sciences. Here, we present a microfabricated heat-delivery platform that enables reaction-induced localized on-chip annealing up to 1400°C. A buried reactive multilayer combined with a nanometric diffusion barrier provide ultra-fast heating and quenching rates on the order of 10^6°C s^−1 as illustrated by the generation of ultra-high aspect ratio microstructures during rapid-solidification and the stabilization of dopant-free tetragonal zirconia at room temperature. Rapid kinetics also enable the observation of transient states of capillary-driven hole collapse in melts. Our work expands localized high-temperature processing routes and offers a material-independent approach for rapid screening of multidimensional nanomaterials on and off-equilibrium.
ER  -