Strain and Interface-Driven Localized Emission in MoSe 2 Monolayers on GaN Nanopillars
Abstract
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus dielectric environment remain unclear. Here we combine hyperspectral superlocalization of photoluminescence with co-registered AFM topography and phase to map localized states (LS) positions in MoSe2 on GaN nanopillars and correlate them with bending strain and the local environment. Contrary to a purely strain-driven picture, LS cluster at suspended-supported interfaces around the pillar apex and span a broad strain range with no clear threshold, while being scarce along high-strain ripples. We discuss the candidate mechanisms, including the local dielectric environment, and suggest co-engineering of strain gradients and nanoscale interface heterogeneity for deterministic emitter positioning in TMDs.
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BibTeX
@article{alaoui2026strain,
title = {{Strain and Interface-Driven Localized Emission in MoSe 2 Monolayers on GaN Nanopillars}},
author = {Abderrahim Lamrani Alaoui and Álvaro Moreno and Maximilian Heithoff and Virginie Brändli and Aimeric Courville and Maksym Gromovyi and Sébastien Chenot and Mahima S Srivastava and Stéphane Vézian and Benjamin Damilano and Frank Koppens and Yannick Chassagneux and Christophe Voisin and Philippe Boucaud and Antoine Reserbat-Plantey},
journal = {ACS photonics},
year = {2026},
month = sep,
doi = {10.1021/acsphotonics.6c01384},
url = {https://hal.science/hal-05804226v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Strain and Interface-Driven Localized Emission in MoSe 2 Monolayers on GaN Nanopillars
AU - Abderrahim Lamrani Alaoui
AU - Álvaro Moreno
AU - Maximilian Heithoff
AU - Virginie Brändli
AU - Aimeric Courville
AU - Maksym Gromovyi
AU - Sébastien Chenot
AU - Mahima S Srivastava
AU - Stéphane Vézian
AU - Benjamin Damilano
AU - Frank Koppens
AU - Yannick Chassagneux
AU - Christophe Voisin
AU - Philippe Boucaud
AU - Antoine Reserbat-Plantey
PY - 2026
DA - 2026/09/04
JO - ACS photonics
DO - 10.1021/acsphotonics.6c01384
UR - https://hal.science/hal-05804226v1
AB - Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of strain versus dielectric environment remain unclear. Here we combine hyperspectral superlocalization of photoluminescence with co-registered AFM topography and phase to map localized states (LS) positions in MoSe2 on GaN nanopillars and correlate them with bending strain and the local environment. Contrary to a purely strain-driven picture, LS cluster at suspended-supported interfaces around the pillar apex and span a broad strain range with no clear threshold, while being scarce along high-strain ripples. We discuss the candidate mechanisms, including the local dielectric environment, and suggest co-engineering of strain gradients and nanoscale interface heterogeneity for deterministic emitter positioning in TMDs.
SN - 2330-4022
ER -