Skip to content
DraconiticResearch
Search Sources API
197,768 studies31 sourcesUpdated 45 min ago
PreprintCC BY 4.0arXiv

Electrical Spectroscopy of Intervalley Relaxation in WSe2 Transistors

  • Katsunori Wakabayashi
Open at sourcePDFDOICite

Abstract

We show that the transconductance of multilayer WSe2 field-effect transistors serves as a direct electrical spectrometer of the intervalley relaxation time τiv, previously accessible only by ultrafast optical techniques. Extending an equilibrium valley-thermodynamics framework with a single relaxation equation for the Γ-valley carrier fraction fΓ(t), we predict three signatures: (i)~a Lorentzian transconductance gm(ω)=gm,0+gm,v0/(1+iωτiv), whose imaginary part peaks at ωc=τiv−1 with opposite signs for bilayer and trilayer; (ii)~a two-stage current transient after a gate step, exhibiting bilayer overshoot or trilayer undershoot; and (iii)~sweep-rate-proportional hysteresis whose gate-voltage profile and the layer-dependent transconductance sign reversal distinguish valley from trap-induced dynamics. All three signatures provide quantitative electrical access to τiv with standard radio-frequency (rf) and direct-current (dc) instrumentation.

Versions

Related

  1. Hot-Carrier Distribution Spectroscopy by Transconductance in Two-Dimensional Field-Effect Transistors
    Katsunori Wakabayashi
    arXivPreprintCC BY 4.0Full textCondensed matterarXiv
  2. Spin Relaxation and Electrical Control of Spin Transport in Few-Layer Td-MoTe2
    T. Wakamura, M. Hashisaka, M. Bard +6
    arXivPreprintCC BY 4.0Full textCondensed matterarXiv
  3. Spin-orbit torque effects in all-electrical spin-wave spectroscopy experiments
    José Solano Córdova, Jone Mencos, Richard Schlitz +10
    arXivPreprintCC BY-NC-SA 4.0Full textCondensed matterarXiv
  4. Dual-Kinetic Relaxation Spectroscopy for Discrimination of Volatile Organic Mixtures via Finite-Size Surface Gratings
    Narimane Hassaine, Luca Moretti, Riccardo Castagna +5
    ACS OmegaPeer-reviewedCC BY 4.0Full textOptics & photonicsCrossref
  5. Reduced-parameter ultrasound electrical impedance spectroscopy for characterization of piezoelectric transducers and polymer materials
    Jhoan F Acevedo-Espinosa, Flávio O S D’amato, Marcos V D Vermelho +5
    UltrasonicsPeer-reviewedCC BY 4.0Full textApplied physics & instrumentationHAL

Cite

BibTeXRIS
BibTeX
@misc{wakabayashi2026electrical,
  title = {{Electrical Spectroscopy of Intervalley Relaxation in WSe$_2$ Transistors}},
  author = {Katsunori Wakabayashi},
  howpublished = {arXiv},
  year = {2026},
  month = jul,
  doi = {10.48550/arxiv.2606.10470},
  eprint = {2606.10470},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2606.10470},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Electrical Spectroscopy of Intervalley Relaxation in WSe_2 Transistors
AU  - Katsunori Wakabayashi
PY  - 2026
DA  - 2026/07/13
PB  - arXiv
DO  - 10.48550/arxiv.2606.10470
UR  - https://arxiv.org/abs/2606.10470
AB  - We show that the transconductance of multilayer WSe_2 field-effect transistors serves as a direct electrical spectrometer of the intervalley relaxation time τ_iv, previously accessible only by ultrafast optical techniques. Extending an equilibrium valley-thermodynamics framework with a single relaxation equation for the Γ-valley carrier fraction f_Γ(t), we predict three signatures: (i)~a Lorentzian transconductance g_m(ω)=g_m,0+g_m,v^0/(1+iωτ_iv), whose imaginary part peaks at ω_c=τ_iv^−1 with opposite signs for bilayer and trilayer; (ii)~a two-stage current transient after a gate step, exhibiting bilayer overshoot or trilayer undershoot; and (iii)~sweep-rate-proportional hysteresis whose gate-voltage profile and the layer-dependent transconductance sign reversal distinguish valley from trap-induced dynamics. All three signatures provide quantitative electrical access to τ_iv with standard radio-frequency (rf) and direct-current (dc) instrumentation.
ER  -