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203,203 studies31 sourcesUpdated 11 min ago
Peer-reviewedCC BY 3.0RSC Advances

Niobium pentoxide-mediated engineering of the SnO2/perovskite interface: simulation study

  • Mustafa Kareem1,2
  • Basem Abu Zneid3
  • Anjan Kumar4
  • Gopalakrishna K.5
  • Satish Choudhury6
  • Ramneek Sidhu7
7 affiliations
  1. 1College of Remote Sensing and Geophysics, Al-Karkh University of Science Haifa St. Baghdad 10011 Iraq
  2. 2College of Science, University of Warith Al-Anbiyaa 56001 Karbala Iraq
  3. 3Faculty of Technical Education, Hourani Center for Applied Scientific Research (HCASR), Al-Ahliyya Amman University Amman Jordan
  4. 4Department of Electronics and Communication Engineering, GLA University Mathura-281406 India
  5. 5Department of Electronics and Communication Engineering, School of Engineering and Technology, JAIN (Deemed to be University) Bangalore Karnataka India
  6. 6Department of Electrical & Electronics Engineering, Siksha ‘O' Anusandhan (Deemed to be University) Bhubaneswar Odisha-751030 India
  7. 7Department of Electronics and Communication Engineering, Chandigarh University Mohali Punjab India
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Abstract

Planar perovskite solar cells suffer from interfacial losses at the perovskite/charge transport layer junction, limiting their efficiency and stability. This work introduces an ultrathin niobium pentoxide layer between the electron transport layer and perovskite interface, acting as an interlayer. The niobium pentoxide interface enables charge transport across the interlayer in the solar cells without causing any significant changes in the characteristics of the perovskite absorber. This modification suppressed leakage current and charge carrier recombination, decreasing the energy barrier for electron extraction, leading to improved open-circuit voltage and overall power conversion efficiency. The method achieved a maximum efficiency of 25.19% in single-junction typical perovskite solar cells in comparison to the 22.66% for the optimized device without modification. Moreover, increasing operating temperature from 300 K to 400 K reduced the normalized efficiency of the solar cell only by 14% of its initial performance at 300 K, indicating a low reduction in electrical device properties. This study offers insights into engineering the interface properties and improving the photovoltaic performance of perovskite photovoltaics.

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Cite

BibTeXRIS
BibTeX
@article{kareem2026niobium,
  title = {{Niobium pentoxide-mediated engineering of the SnO2/perovskite interface: simulation study}},
  author = {Mustafa Kareem and Basem Abu Zneid and Anjan Kumar and Gopalakrishna K. and Satish Choudhury and Ramneek Sidhu},
  journal = {RSC Advances},
  year = {2026},
  month = nov,
  doi = {10.1039/d6ra10070h},
  url = {https://doi.org/10.1039/d6ra10070h},
  note = {CC BY 3.0},
}
RIS
TY  - JOUR
TI  - Niobium pentoxide-mediated engineering of the SnO2/perovskite interface: simulation study
AU  - Mustafa Kareem
AU  - Basem Abu Zneid
AU  - Anjan Kumar
AU  - Gopalakrishna K.
AU  - Satish Choudhury
AU  - Ramneek Sidhu
PY  - 2026
DA  - 2026/11/04
JO  - RSC Advances
DO  - 10.1039/d6ra10070h
UR  - https://doi.org/10.1039/d6ra10070h
AB  - Planar perovskite solar cells suffer from interfacial losses at the perovskite/charge transport layer junction, limiting their efficiency and stability. This work introduces an ultrathin niobium pentoxide layer between the electron transport layer and perovskite interface, acting as an interlayer. The niobium pentoxide interface enables charge transport across the interlayer in the solar cells without causing any significant changes in the characteristics of the perovskite absorber. This modification suppressed leakage current and charge carrier recombination, decreasing the energy barrier for electron extraction, leading to improved open-circuit voltage and overall power conversion efficiency. The method achieved a maximum efficiency of 25.19% in single-junction typical perovskite solar cells in comparison to the 22.66% for the optimized device without modification. Moreover, increasing operating temperature from 300 K to 400 K reduced the normalized efficiency of the solar cell only by 14% of its initial performance at 300 K, indicating a low reduction in electrical device properties. This study offers insights into engineering the interface properties and improving the photovoltaic performance of perovskite photovoltaics.
SN  - 2046-2069
ER  -