Current-Driven Magnetization Switching via Zhang-Li Torque
Abstract
Current-driven magnetization switching is currently governed by two established mechanisms: the Slonczewski spin-transfer torque (STT) and the spin-orbit torque (SOT). Here we identify the Zhang-Li STT as a third mechanism that operates on a different physical footing. Using micromagnetic simulations, we show that the interfacial Dzyaloshinskii-Moriya interaction (iDMI) inevitably creates spatial magnetization gradients at device edges, enabling the Zhang-Li torque to drive deterministic, field-assisted switching that fully reproduces all hallmark behaviors of SOT, including polarity control and effective-field characteristics. Our work establishes the Zhang-Li torque as an autonomous switching pathway, redefining the physical picture of current-induced magnetization reversal and providing new design principles for spintronic devices.
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BibTeX
@misc{li2026currentdriven,
title = {{Current-Driven Magnetization Switching via Zhang-Li Torque}},
author = {Shuai Li and Maokang Shen and Liuyu Tang and Weiwei Lin and Kaiming Cai and Tao Wang and Tianli Jin and Yue Zhang},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2607.26392},
eprint = {2607.26392},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2607.26392},
}
RIS
TY - UNPB
TI - Current-Driven Magnetization Switching via Zhang-Li Torque
AU - Shuai Li
AU - Maokang Shen
AU - Liuyu Tang
AU - Weiwei Lin
AU - Kaiming Cai
AU - Tao Wang
AU - Tianli Jin
AU - Yue Zhang
PY - 2026
DA - 2026/09/10
PB - arXiv
DO - 10.48550/arxiv.2607.26392
UR - https://arxiv.org/abs/2607.26392
AB - Current-driven magnetization switching is currently governed by two established mechanisms: the Slonczewski spin-transfer torque (STT) and the spin-orbit torque (SOT). Here we identify the Zhang-Li STT as a third mechanism that operates on a different physical footing. Using micromagnetic simulations, we show that the interfacial Dzyaloshinskii-Moriya interaction (iDMI) inevitably creates spatial magnetization gradients at device edges, enabling the Zhang-Li torque to drive deterministic, field-assisted switching that fully reproduces all hallmark behaviors of SOT, including polarity control and effective-field characteristics. Our work establishes the Zhang-Li torque as an autonomous switching pathway, redefining the physical picture of current-induced magnetization reversal and providing new design principles for spintronic devices.
ER -