Synthesis of halide perovskite thin films from an eutectic mixture of Pb(NO₃)₂, acetamide, and urea for fabricating resistive random-access memory (RRAM).
4 affiliations
- 1Faculty of Chemistry, University of Science, Vietnam National University Ho Chi Minh City Vietnam [email protected].
- 2Vietnam National University Ho Chi Minh City Vietnam.
- 3Faculty of Interdisciplinary Science, University of Science, Vietnam National University Ho Chi Minh City Vietnam.
- 4Faculty of Materials Science and Technology, University of Science Ho Chi Minh City Vietnam.
Abstract
Methylammonium lead iodide (MAPbI₃) perovskite is conventionally synthesized in toxic solvents such as dimethylformamide and dimethyl sulfoxide, whose associated health and environmental risks limit large-scale and sustainable production. Building on our previous work, we further developed a synthesis route for MAPbI₃ perovskite using a deep eutectic mixture composed of lead nitrate, acetamide, and urea. The resulting perovskite thin film with its intrinsic hysteresis behavior was used to fabricate resistive random-access memory (RRAM). The structure and morphology of the perovskite films were characterized by X-ray diffraction and scanning electron microscopy, respectively, while the operation of RRAM devices was evaluated by current-voltage curve measurement. The perovskite films synthesized using the eutectic mixture exhibited improved phase conversion and greater stability than those fabricated by the conventional sequential deposition method. Electrical characterization of the RRAM devices demonstrated reliable and repeatable current-voltage behavior, with strong endurance and retention performance. Notably, the devices exhibited both analog and digital resistive switching modes, underscoring their potential for multifunctional non-volatile memory and neuromorphic computing. Overall, our findings provided a reduced-hazard solvent pathway for MAPbI₃ perovskite synthesis, replacing toxic organic solvents with a low-toxicity deep eutectic system while broadening its applicability to next-generation memory technologies with implications for future sustainable information storage solutions.
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BibTeX
@article{huynh2026synthesis,
title = {{Synthesis of halide perovskite thin films from an eutectic mixture of Pb(NO₃)₂, acetamide, and urea for fabricating resistive random-access memory (RRAM).}},
author = {Chuong Thanh Huynh and Vy Thao Ha Cao and Tai Duy Nguyen and Tung Thanh Ngo and Em Hoang Danh and Quan Phu Pham and Ngoc Kim Pham and Phuong Tuyet Nguyen},
journal = {RSC advances},
year = {2026},
month = oct,
doi = {10.1039/d6ra06024b},
url = {https://europepmc.org/article/MED/42898921},
note = {CC BY-NC},
}
RIS
TY - JOUR
TI - Synthesis of halide perovskite thin films from an eutectic mixture of Pb(NO₃)₂, acetamide, and urea for fabricating resistive random-access memory (RRAM).
AU - Chuong Thanh Huynh
AU - Vy Thao Ha Cao
AU - Tai Duy Nguyen
AU - Tung Thanh Ngo
AU - Em Hoang Danh
AU - Quan Phu Pham
AU - Ngoc Kim Pham
AU - Phuong Tuyet Nguyen
PY - 2026
DA - 2026/10/19
JO - RSC advances
DO - 10.1039/d6ra06024b
UR - https://europepmc.org/article/MED/42898921
AB - Methylammonium lead iodide (MAPbI₃) perovskite is conventionally synthesized in toxic solvents such as dimethylformamide and dimethyl sulfoxide, whose associated health and environmental risks limit large-scale and sustainable production. Building on our previous work, we further developed a synthesis route for MAPbI₃ perovskite using a deep eutectic mixture composed of lead nitrate, acetamide, and urea. The resulting perovskite thin film with its intrinsic hysteresis behavior was used to fabricate resistive random-access memory (RRAM). The structure and morphology of the perovskite films were characterized by X-ray diffraction and scanning electron microscopy, respectively, while the operation of RRAM devices was evaluated by current-voltage curve measurement. The perovskite films synthesized using the eutectic mixture exhibited improved phase conversion and greater stability than those fabricated by the conventional sequential deposition method. Electrical characterization of the RRAM devices demonstrated reliable and repeatable current-voltage behavior, with strong endurance and retention performance. Notably, the devices exhibited both analog and digital resistive switching modes, underscoring their potential for multifunctional non-volatile memory and neuromorphic computing. Overall, our findings provided a reduced-hazard solvent pathway for MAPbI₃ perovskite synthesis, replacing toxic organic solvents with a low-toxicity deep eutectic system while broadening its applicability to next-generation memory technologies with implications for future sustainable information storage solutions.
SN - 2046-2069
ER -