Effect of Annealing on Maze Domains in Topological Insulator - Magnetic Multilayer Heterostructures
Abstract
Combining topological insulators with chiral magnetic multilayers offers the opportunity to greatly enhance the spin-orbit torque (SOT) driven manipulation of hosted spin textures, however this also exposes devices to the often poor temperature stability of the commonly used, Bi2X3-based (X is a chalcogenic element), topological insulator films. In this work we demonstrate through in-situ-annealing and polarised neutron reflectometry that the multilayer at a Bi2Se3 interface remains magnetically robust up to a temperature of 350 ∘C: even as the Bi2Se3 epilayer structurally deteriorates. Through x-ray photoemission electron microscopy, an intermediate annealing temperature of ∼ 200 ∘C was found to improve the domain ordering of the multilayer, allowing for field-induced skyrmion nucleation, all whilst sustaining minimal damage to the topological insulator
Related
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BibTeX
@misc{brereton2026effect,
title = {{Effect of Annealing on Maze Domains in Topological Insulator - Magnetic Multilayer Heterostructures}},
author = {Benjamin A. Brereton and Soumyarup Hait and Christy J. Kinane and Francesco Maccherozzi and Ahmet Yagmur and Satoshi Sasaki and Thomas A. Moore and Sean Langridge and Christopher H. Marrows},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.29694},
eprint = {2610.29694},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.29694},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Effect of Annealing on Maze Domains in Topological Insulator - Magnetic Multilayer Heterostructures
AU - Benjamin A. Brereton
AU - Soumyarup Hait
AU - Christy J. Kinane
AU - Francesco Maccherozzi
AU - Ahmet Yagmur
AU - Satoshi Sasaki
AU - Thomas A. Moore
AU - Sean Langridge
AU - Christopher H. Marrows
PY - 2026
DA - 2026/10/21
PB - arXiv
DO - 10.48550/arxiv.2610.29694
UR - https://arxiv.org/abs/2610.29694
AB - Combining topological insulators with chiral magnetic multilayers offers the opportunity to greatly enhance the spin-orbit torque (SOT) driven manipulation of hosted spin textures, however this also exposes devices to the often poor temperature stability of the commonly used, Bi_2X_3-based (X is a chalcogenic element), topological insulator films. In this work we demonstrate through in-situ-annealing and polarised neutron reflectometry that the multilayer at a Bi_2Se_3 interface remains magnetically robust up to a temperature of 350 ^∘C: even as the Bi_2Se_3 epilayer structurally deteriorates. Through x-ray photoemission electron microscopy, an intermediate annealing temperature of ∼ 200 ^∘C was found to improve the domain ordering of the multilayer, allowing for field-induced skyrmion nucleation, all whilst sustaining minimal damage to the topological insulator
ER -