Sn-InAs nanowire shadow-defined Josephson junctions

Abstract

Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of β-Sn. The wires grow via the vapor-liquid-solid mechanism out from (001) InAs substrates along two orientations, forming a criss-crossing landscape. This allows us to define nanowire-shadow junctions during the low temperature Sn shell deposition by carefully choosing the deposition angle. We find that the Sn shells are uniform in thickness and the grains have a preferential in-plane epitaxial relationship with InAs. The interface between Sn and InAs is abrupt and we do not observe interdiffusion. In our nanowire devices, Sn induces a superconducting gap of order 600 μeV, switching currents reaching values up to 500 nA, and critical magnetic fields along the nanowire of up to 1.3 T. These characteristics can be leveraged in the design of superconducting transmon qubits, parametric microwave amplifiers as well as for the investigation of triplet and topological superconductivity.

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Cite

BibTeX RIS

BibTeX

@article{sharma2026sninas,
  title = {{Sn-InAs nanowire shadow-defined Josephson junctions}},
  author = {Amritesh Sharma and An-Hsi Chen and Connor P. Dempsey and Amrita Purkayastha and Mihir Pendharkar and Susheng Tan and Christopher J. Palmstrøm and Sergey M. Frolov and Moïra Hocevar},
  journal = {Nano Letters},
  year = {2026},
  month = sep,
  doi = {10.1021/acs.nanolett.5c02410},
  eprint = {2503.13725},
  archivePrefix = {arXiv},
  url = {https://hal.science/hal-04997963v1},
  note = {CC BY 4.0},
}

RIS

TY  - JOUR
TI  - Sn-InAs nanowire shadow-defined Josephson junctions
AU  - Amritesh Sharma
AU  - An-Hsi Chen
AU  - Connor P. Dempsey
AU  - Amrita Purkayastha
AU  - Mihir Pendharkar
AU  - Susheng Tan
AU  - Christopher J. Palmstrøm
AU  - Sergey M. Frolov
AU  - Moïra Hocevar
PY  - 2026
DA  - 2026/09/23
JO  - Nano Letters
DO  - 10.1021/acs.nanolett.5c02410
UR  - https://hal.science/hal-04997963v1
AB  - Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of β-Sn. The wires grow via the vapor-liquid-solid mechanism out from (001) InAs substrates along two orientations, forming a criss-crossing landscape. This allows us to define nanowire-shadow junctions during the low temperature Sn shell deposition by carefully choosing the deposition angle. We find that the Sn shells are uniform in thickness and the grains have a preferential in-plane epitaxial relationship with InAs. The interface between Sn and InAs is abrupt and we do not observe interdiffusion. In our nanowire devices, Sn induces a superconducting gap of order 600 μeV, switching currents reaching values up to 500 nA, and critical magnetic fields along the nanowire of up to 1.3 T. These characteristics can be leveraged in the design of superconducting transmon qubits, parametric microwave amplifiers as well as for the investigation of triplet and topological superconductivity.
SN  - 1530-6984
SN  - 1530-6992
ER  -

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