From Simulation to Fabrication: Realizing Silicon Crystalline Undulators with Silicon Nitride Stressor Layer Patterning
Abstract
A crystalline undulator is a crystal exhibiting periodic deformations that cause channeled particles to oscillate, generating coherent electromagnetic waves. In this study, stressor layer patterning has been employed to induce the desired deformations on a silicon substrate. Finite element method simulations were performed to optimize the geometric parameters of the undulator. The primary focus was on achieving sinusoidal deformation with sub-millimeter period and amplitude exceeding 1~nm, utilizing the silicon (110) plane for its superior channeling properties. Key parameters, such as substrate thickness and undulator period, were meticulously refined to ensure uniform deformation while minimizing the impact of higher harmonics, which could degrade performance. Based on the simulation results, a crystalline undulator, 160 μm thick and consisting of 10 periods with a period length of 334 μm, has been successfully fabricated. The final device demonstrates structural integrity and a uniform deformation extending up to 20 μm from the surface. Specifically designed for use with 5-30 GeV particle beams, the undulator is capable of generating gamma photons in the 5-15 MeV range. This work effectively integrates advanced simulation techniques with precise fabrication methods, demonstrating the feasibility of crystalline undulators as high-performance devices for generating gamma radiation.
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BibTeX
@misc{malagutti2026from,
title = {{From Simulation to Fabrication: Realizing Silicon Crystalline Undulators with Silicon Nitride Stressor Layer Patterning}},
author = {L. Malagutti and L. Bandiera and F. Bonafè and N. Canale and D. De Salvador and P. Fedeli and V. Guidi and A. V. Korol and F. Mancarella and R. Negrello and Gianfranco Paternò and M. Romagnoni and F. Sgarbossa and A. V. Solov'yov and A. Sytov and D. Valzani and A. Mazzolari},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.01606},
eprint = {2610.01606},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.01606},
}
RIS
TY - UNPB
TI - From Simulation to Fabrication: Realizing Silicon Crystalline Undulators with Silicon Nitride Stressor Layer Patterning
AU - L. Malagutti
AU - L. Bandiera
AU - F. Bonafè
AU - N. Canale
AU - D. De Salvador
AU - P. Fedeli
AU - V. Guidi
AU - A. V. Korol
AU - F. Mancarella
AU - R. Negrello
AU - Gianfranco Paternò
AU - M. Romagnoni
AU - F. Sgarbossa
AU - A. V. Solov'yov
AU - A. Sytov
AU - D. Valzani
AU - A. Mazzolari
PY - 2026
DA - 2026/10/01
PB - arXiv
DO - 10.48550/arxiv.2610.01606
UR - https://arxiv.org/abs/2610.01606
AB - A crystalline undulator is a crystal exhibiting periodic deformations that cause channeled particles to oscillate, generating coherent electromagnetic waves. In this study, stressor layer patterning has been employed to induce the desired deformations on a silicon substrate. Finite element method simulations were performed to optimize the geometric parameters of the undulator. The primary focus was on achieving sinusoidal deformation with sub-millimeter period and amplitude exceeding 1~nm, utilizing the silicon (110) plane for its superior channeling properties. Key parameters, such as substrate thickness and undulator period, were meticulously refined to ensure uniform deformation while minimizing the impact of higher harmonics, which could degrade performance. Based on the simulation results, a crystalline undulator, 160 μm thick and consisting of 10 periods with a period length of 334 μm, has been successfully fabricated. The final device demonstrates structural integrity and a uniform deformation extending up to 20 μm from the surface. Specifically designed for use with 5-30 GeV particle beams, the undulator is capable of generating gamma photons in the 5-15 MeV range. This work effectively integrates advanced simulation techniques with precise fabrication methods, demonstrating the feasibility of crystalline undulators as high-performance devices for generating gamma radiation.
ER -