Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga–Ge–Sb–Se Waveguides Deposited on Different Substrates
Abstract
Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy³⁺-doped selenide thin films on SiO₂ or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films’ properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 μm. The argon pressure of 1 × 10⁻² mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 μm, single-mode optical propagation is efficiently observed in 5000 ppmw Dy³⁺-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.
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BibTeX
@article{ghanawi2026influence,
title = {{Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga–Ge–Sb–Se Waveguides Deposited on Different Substrates}},
author = {Taghrid Ghanawi and Florent Starecki and Marion Baillieul and Abdelali Hammouti and Jan Gutwirth and Jonathan Lemaitre and Albane Benardais and Thierry Pain and Stanislav Slang and Joël Charrier and Petr Nemec and Loïc Bodiou and Virginie Nazabal},
journal = {ACS Applied Optical Materials},
year = {2026},
month = sep,
doi = {10.1021/acsaom.5c00306},
url = {https://hal.science/hal-05405280v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga–Ge–Sb–Se Waveguides Deposited on Different Substrates
AU - Taghrid Ghanawi
AU - Florent Starecki
AU - Marion Baillieul
AU - Abdelali Hammouti
AU - Jan Gutwirth
AU - Jonathan Lemaitre
AU - Albane Benardais
AU - Thierry Pain
AU - Stanislav Slang
AU - Joël Charrier
AU - Petr Nemec
AU - Loïc Bodiou
AU - Virginie Nazabal
PY - 2026
DA - 2026/09/04
JO - ACS Applied Optical Materials
DO - 10.1021/acsaom.5c00306
UR - https://hal.science/hal-05405280v1
AB - Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy³⁺-doped selenide thin films on SiO₂ or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films’ properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 μm. The argon pressure of 1 × 10⁻² mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 μm, single-mode optical propagation is efficiently observed in 5000 ppmw Dy³⁺-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.
SN - 2771-9855
ER -