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Ultrafast and Anisotropic Exciton Transport in Layered NbOI2

  • Salman Ahsanullah
  • Neema Rafizadeh
  • Hui Zhao
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Abstract

Ferroelectric layered semiconductors provide a unique platform for exploring coupled excitonic and electronic phenomena in reduced dimensions. Here, exciton transport in layered NbOI2 is investigated using transient absorption microscopy. Ultrafast and strongly anisotropic exciton diffusion is observed. The diffusion coefficient of about 160 cm2 s−1 along the nonpolar crystal axis is among the highest reported for van der Waals semiconductors. The transport exhibits an approximately twofold in-plane anisotropy between the polar and nonpolar directions, reflecting the intrinsic low-symmetry crystal structure of NbOI2. The environmental stability of NbOI2 is further investigated, and fabrication and encapsulation conditions required to achieve long-term sample stability are identified. These results establish NbOI2 as a promising platform for studying anisotropic exciton transport and highlight the critical role of interface protection in air-sensitive van der Waals materials.

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Cite

BibTeXRIS
BibTeX
@misc{ahsanullah2026ultrafast,
  title = {{Ultrafast and Anisotropic Exciton Transport in Layered NbOI$_2$}},
  author = {Salman Ahsanullah and Neema Rafizadeh and Hui Zhao},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.28877},
  eprint = {2610.28877},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.28877},
}
RIS
TY  - UNPB
TI  - Ultrafast and Anisotropic Exciton Transport in Layered NbOI_2
AU  - Salman Ahsanullah
AU  - Neema Rafizadeh
AU  - Hui Zhao
PY  - 2026
DA  - 2026/10/20
PB  - arXiv
DO  - 10.48550/arxiv.2610.28877
UR  - https://arxiv.org/abs/2610.28877
AB  - Ferroelectric layered semiconductors provide a unique platform for exploring coupled excitonic and electronic phenomena in reduced dimensions. Here, exciton transport in layered NbOI_2 is investigated using transient absorption microscopy. Ultrafast and strongly anisotropic exciton diffusion is observed. The diffusion coefficient of about 160 cm^2 s^−1 along the nonpolar crystal axis is among the highest reported for van der Waals semiconductors. The transport exhibits an approximately twofold in-plane anisotropy between the polar and nonpolar directions, reflecting the intrinsic low-symmetry crystal structure of NbOI_2. The environmental stability of NbOI_2 is further investigated, and fabrication and encapsulation conditions required to achieve long-term sample stability are identified. These results establish NbOI_2 as a promising platform for studying anisotropic exciton transport and highlight the critical role of interface protection in air-sensitive van der Waals materials.
ER  -