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PreprintarXiv licencearXiv

Dissipationless valley diode effects in Kekulé graphene superlattices

Abstract

Superconducting diodes have attracted considerable interest for nonreciprocal device applications owing to their dissipationless transport. Here, we theoretically propose that a tunnel junction based on the Kekulé graphene superlattice can host a finite valley supercurrent that exhibits pronounced nonreciprocity even in the absence of superconductivity, giving rise to a dissipationless valley diode effect. This effect originates from the additional reflection phase acquired by electrons in each transverse channel and supports perfect valley diode rectification with 100% efficiency, which can be readily tuned via the gate voltage. This finding provides a platform for designing dissipationless valleytronics in a more versatile manner.

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BibTeX
@misc{zeng2026dissipationless,
  title = {{Dissipationless valley diode effects in Kekulé graphene superlattices}},
  author = {W. Zeng},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.04396},
  eprint = {2611.04396},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.04396},
}
RIS
TY  - UNPB
TI  - Dissipationless valley diode effects in Kekulé graphene superlattices
AU  - W. Zeng
PY  - 2026
DA  - 2026/11/03
PB  - arXiv
DO  - 10.48550/arxiv.2611.04396
UR  - https://arxiv.org/abs/2611.04396
AB  - Superconducting diodes have attracted considerable interest for nonreciprocal device applications owing to their dissipationless transport. Here, we theoretically propose that a tunnel junction based on the Kekulé graphene superlattice can host a finite valley supercurrent that exhibits pronounced nonreciprocity even in the absence of superconductivity, giving rise to a dissipationless valley diode effect. This effect originates from the additional reflection phase acquired by electrons in each transverse channel and supports perfect valley diode rectification with 100% efficiency, which can be readily tuned via the gate voltage. This finding provides a platform for designing dissipationless valleytronics in a more versatile manner.
ER  -