Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs

Abstract

Gain layer doping concentration determines the electric field profile in a low gain avalanche detector (LGAD) and is therefore the primary design parameter. This work reports its influence on the charge collection and timing behavior of 4H-SiC LGADs. Two mesa-isolated devices with cold He ion implanted termination differ only in gain layer doping, 4×10¹⁷~cm⁻³ and 5×10¹⁷~cm⁻³, and are characterized together with a PIN diode from the same wafer using the ultraviolet transient current technique (UV-TCT). The 25\% doping difference produces a gain difference of about two orders of magnitude at the same applied bias, representing a gain range of 3.7 to 216. Under UV-TCT excitation, the higher-doped device exhibits time-resolution minima within a gain range of about 20--80 across the investigated laser intensities, consistent with the transition from electronic-noise-dominated jitter to multiplication shot noise. The non-monotonic timing response is also observed under a ⁹⁰Sr beta source with a Si LGAD reference: the higher-doped device reaches 51.7 ps at 280 V and then degrades, while the lower-doped device requires more than 450 V. This measured gain window provides an experimental reference for further optimization of the gain-layer design.

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BibTeX RIS

BibTeX

@misc{yang2026impact,
  title = {{Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs}},
  author = {Tao Yang and Ben J. Sekely and Yashas Satapathy and Abraham Tishelman-Charny and Greg Allion and Gil Atar and Philip Barletta and Gabriele Giacomini and Carl Haber and Steve Holland and John F. Muth and Spyridon Pavlidis and Chengxi Yang and Haichen Wang and Stefania Stucci},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.00824},
  eprint = {2610.00824},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.00824},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs
AU  - Tao Yang
AU  - Ben J. Sekely
AU  - Yashas Satapathy
AU  - Abraham Tishelman-Charny
AU  - Greg Allion
AU  - Gil Atar
AU  - Philip Barletta
AU  - Gabriele Giacomini
AU  - Carl Haber
AU  - Steve Holland
AU  - John F. Muth
AU  - Spyridon Pavlidis
AU  - Chengxi Yang
AU  - Haichen Wang
AU  - Stefania Stucci
PY  - 2026
DA  - 2026/10/01
PB  - arXiv
DO  - 10.48550/arxiv.2610.00824
UR  - https://arxiv.org/abs/2610.00824
AB  - Gain layer doping concentration determines the electric field profile in a low gain avalanche detector (LGAD) and is therefore the primary design parameter. This work reports its influence on the charge collection and timing behavior of 4H-SiC LGADs. Two mesa-isolated devices with cold He ion implanted termination differ only in gain layer doping, 4×10^17~cm^−3 and 5×10^17~cm^−3, and are characterized together with a PIN diode from the same wafer using the ultraviolet transient current technique (UV-TCT). The 25\% doping difference produces a gain difference of about two orders of magnitude at the same applied bias, representing a gain range of 3.7 to 216. Under UV-TCT excitation, the higher-doped device exhibits time-resolution minima within a gain range of about 20--80 across the investigated laser intensities, consistent with the transition from electronic-noise-dominated jitter to multiplication shot noise. The non-monotonic timing response is also observed under a ^90Sr beta source with a Si LGAD reference: the higher-doped device reaches 51.7 ps at 280 V and then degrades, while the lower-doped device requires more than 450 V. This measured gain window provides an experimental reference for further optimization of the gain-layer design.
ER  -

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