• Non-Linear Quantum Lattice Field-Refraction and Triadic Voltage Calibration in Monolayer MoS₂ Computing Architecture
Abstract
This manuscript outlines the operational formulations for a 54-bit Triple-Triple-Engine (TTE) general-purpose processor core utilizing an optimized 1.95 nm three-monolayer Molybdenum Disulfide (MoS₂) ballistic transport channel. To eliminate the dielectric gate breakdown thresholds and severe Joule heating bottlenecks native to conventional 1.2V sub-nanometer silicon architectures, we implement a ratiometric high-voltage step-down network topology. By mapping a 270V DC macro-distribution baseline (MIL-STD-704F compliant) down to a localized 162V DC CPU Main Rail, the system enforces a fixed 3.0V signal strength per bit-lane and a balanced 54V potential difference per atomic layer. Managed by a hardwired asynchronous supervisor (Core 4), the module processes extreme current density spikes with zero localized contact resistance across a three-stage quantum ohmic interface, maintaining a continuous 300.1 K environmental baseline under maximum execution load.
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BibTeX
@misc{morse2026nonlinear,
title = {{• Non-Linear Quantum Lattice Field-Refraction and Triadic Voltage Calibration in Monolayer MoS₂ Computing Architecture}},
author = {Patrick Morse},
howpublished = {Zenodo},
year = {2026},
month = oct,
doi = {10.5281/zenodo.23603849},
url = {https://zenodo.org/records/23603849},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - • Non-Linear Quantum Lattice Field-Refraction and Triadic Voltage Calibration in Monolayer MoS₂ Computing Architecture
AU - Patrick Morse
PY - 2026
DA - 2026/10/23
PB - Zenodo
DO - 10.5281/zenodo.23603849
UR - https://zenodo.org/records/23603849
AB - This manuscript outlines the operational formulations for a 54-bit Triple-Triple-Engine (TTE) general-purpose processor core utilizing an optimized 1.95 nm three-monolayer Molybdenum Disulfide (MoS₂) ballistic transport channel. To eliminate the dielectric gate breakdown thresholds and severe Joule heating bottlenecks native to conventional 1.2V sub-nanometer silicon architectures, we implement a ratiometric high-voltage step-down network topology. By mapping a 270V DC macro-distribution baseline (MIL-STD-704F compliant) down to a localized 162V DC CPU Main Rail, the system enforces a fixed 3.0V signal strength per bit-lane and a balanced 54V potential difference per atomic layer. Managed by a hardwired asynchronous supervisor (Core 4), the module processes extreme current density spikes with zero localized contact resistance across a three-stage quantum ohmic interface, maintaining a continuous 300.1 K environmental baseline under maximum execution load.
ER -