Peer-reviewedLicence not statedOptics Express
From terahertz to infrared: field-effect transistor detectors cover 3 orders of magnitude in wavelength from 5.5 πm to 6 mm
Versions
Related
- Gap-engineered high-performance broad spectral-band plasmonic terahertz detectors for wireless communication
- Comprehensive study of timing resolution in plastic scintillator detectors with wavelength-shifting fiber and silicon photomultiplier readout
- Kilopixel Performance of the Kinetic Inductance Detectors for the Terahertz Intensity Mapper
- Probing and Manipulating Quantum Materials with Strong-field Terahertz and Mid-infrared Radiation
- Sub-wavelength mid-infrared imaging of locally driven photocurrents using diamond campanile probes
BibTeX
@article{bek2026from,
title = {{From terahertz to infrared: field-effect transistor detectors cover 3 orders of magnitude in wavelength from 5.5 πm to 6 mm}},
author = {Florian Bek and Rahul Yadav and Fahd Rushd Faridi and J. Michael Klopf and Hong Lu and Andreas Penirschke and Sascha Preu},
journal = {Optics Express},
year = {2026},
month = oct,
doi = {10.1364/oe.615393},
url = {https://opg.optica.org/oe/abstract.cfm?doi=10.1364/OE.615393},
}
RIS
TY - JOUR
TI - From terahertz to infrared: field-effect transistor detectors cover 3 orders of magnitude in wavelength from 5.5 πm to 6 mm
AU - Florian Bek
AU - Rahul Yadav
AU - Fahd Rushd Faridi
AU - J. Michael Klopf
AU - Hong Lu
AU - Andreas Penirschke
AU - Sascha Preu
PY - 2026
DA - 2026/10/16
JO - Optics Express
DO - 10.1364/oe.615393
UR - https://opg.optica.org/oe/abstract.cfm?doi=10.1364/OE.615393
SN - 1094-4087
ER -