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Peer-reviewedCC BY 4.0Communications Materials

Visualizing nanoscale charge flows in multi-dimensional WSe2/GaAs vertical diodes

  • Michele Zendrini1
  • Claire Blaga1
  • Matilde Cantele1
  • Kamil Artur Wodzislawski1,2
  • Alok Rudra1,2
  • Mitali Banerjee3
  • Anna Fontcuberta i Morral1,4
  • Valerio Piazza1
4 affiliations
  1. 1Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
  2. 2Epitaxy Core Facility, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
  3. 3Laboratory of Quantum Physics, Topology and Correlations, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
  4. 4Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
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Abstract

The unique properties of transition metal dichalcogenides provide a versatile platform for scalable, room-temperature quantum devices. Their future commercialization will inevitably depend on the development of heterostructures facilitating charge injection into pre-defined areas of 2D components. We showcase here an innovative approach to accurately characterize electrically active nanoscale regions in multidimensional heterostructures made of WSe₂ layers and GaAs, thin films and in-plane one-dimensional nanostructures. The rectifying behavior of these stacks is visualized through electron-beam induced current mapping with unprecedented spatial resolution. These electrical measurements reveal local diffusive and drift charge flows through the diode. Notably, we observe a significant reduction in the effective carrier concentration in WSe2 layers thinner than 15 nm. 2D/1D ensembles exhibit in-plane confinement of the space charge region as narrow as 140 nm. This level of control over dimensionality, position, and size opens exciting avenues to achieve tunable quantum sources, one step closer to 2D-based quantum devices.

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Cite

BibTeXRIS
BibTeX
@article{zendrini2026visualizing,
  title = {{Visualizing nanoscale charge flows in multi-dimensional WSe2/GaAs vertical diodes}},
  author = {Michele Zendrini and Claire Blaga and Matilde Cantele and Kamil Artur Wodzislawski and Alok Rudra and Mitali Banerjee and Anna Fontcuberta i Morral and Valerio Piazza},
  journal = {Communications Materials},
  year = {2026},
  month = jun,
  doi = {10.1038/s43246-026-01234-6},
  url = {https://doi.org/10.1038/s43246-026-01234-6},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Visualizing nanoscale charge flows in multi-dimensional WSe2/GaAs vertical diodes
AU  - Michele Zendrini
AU  - Claire Blaga
AU  - Matilde Cantele
AU  - Kamil Artur Wodzislawski
AU  - Alok Rudra
AU  - Mitali Banerjee
AU  - Anna Fontcuberta i Morral
AU  - Valerio Piazza
PY  - 2026
DA  - 2026/06/13
JO  - Communications Materials
DO  - 10.1038/s43246-026-01234-6
UR  - https://doi.org/10.1038/s43246-026-01234-6
AB  - The unique properties of transition metal dichalcogenides provide a versatile platform for scalable, room-temperature quantum devices. Their future commercialization will inevitably depend on the development of heterostructures facilitating charge injection into pre-defined areas of 2D components. We showcase here an innovative approach to accurately characterize electrically active nanoscale regions in multidimensional heterostructures made of WSe₂ layers and GaAs, thin films and in-plane one-dimensional nanostructures. The rectifying behavior of these stacks is visualized through electron-beam induced current mapping with unprecedented spatial resolution. These electrical measurements reveal local diffusive and drift charge flows through the diode. Notably, we observe a significant reduction in the effective carrier concentration in WSe2 layers thinner than 15 nm. 2D/1D ensembles exhibit in-plane confinement of the space charge region as narrow as 140 nm. This level of control over dimensionality, position, and size opens exciting avenues to achieve tunable quantum sources, one step closer to 2D-based quantum devices.
SN  - 2662-4443
ER  -