Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots
Abstract
Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally expensive. Combining a Multi-Domain Multi-Model (MDMM) approach with an automated tuning routine, we identify gate voltages associated with selected charge configurations. This small set of self-consistent simulations can be augmented with Full Configuration Interaction (FCI) energy calculations to extract charging energies, lever arms, and interdot Coulomb interactions to directly parameterize a Hubbard model for rapid charge stability diagram generation. For an Intel Tunnel Falls Si/SiGe device, we demonstrate the Hubbard model's ability to reproduce charge stability diagrams at a fraction of the computational cost in comparison to voltage bias sweeps. We further compare the simulated diagrams to experimental data and demonstrate qualitative agreement. Our result represents a step towards predictive digital twin models for semiconductor quantum dot devices. Finally, we apply this workflow towards lever arm engineering in a second device, demonstrating that the method extends to multiple architectures.
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BibTeX
@misc{nodel2026rapid,
title = {{Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots}},
author = {Ron Nodel and David W. Kanaar and Connor Nasseraddin and Tim J. Wilson and Hong-Wen Jiang and Jason R. Petta and Chris Anderson and Mark F. Gyure},
howpublished = {arXiv},
year = {2026},
month = aug,
doi = {10.48550/arxiv.2608.28263},
eprint = {2608.28263},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.28263},
}
RIS
TY - UNPB
TI - Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots
AU - Ron Nodel
AU - David W. Kanaar
AU - Connor Nasseraddin
AU - Tim J. Wilson
AU - Hong-Wen Jiang
AU - Jason R. Petta
AU - Chris Anderson
AU - Mark F. Gyure
PY - 2026
DA - 2026/08/28
PB - arXiv
DO - 10.48550/arxiv.2608.28263
UR - https://arxiv.org/abs/2608.28263
AB - Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally expensive. Combining a Multi-Domain Multi-Model (MDMM) approach with an automated tuning routine, we identify gate voltages associated with selected charge configurations. This small set of self-consistent simulations can be augmented with Full Configuration Interaction (FCI) energy calculations to extract charging energies, lever arms, and interdot Coulomb interactions to directly parameterize a Hubbard model for rapid charge stability diagram generation. For an Intel Tunnel Falls Si/SiGe device, we demonstrate the Hubbard model's ability to reproduce charge stability diagrams at a fraction of the computational cost in comparison to voltage bias sweeps. We further compare the simulated diagrams to experimental data and demonstrate qualitative agreement. Our result represents a step towards predictive digital twin models for semiconductor quantum dot devices. Finally, we apply this workflow towards lever arm engineering in a second device, demonstrating that the method extends to multiple architectures.
ER -