Temperature--Composition Mapping and Growth-History Dependence of rBN-Related Raman Responses in BN Grown on Fe--B under Flowing N2
Abstract
BN products formed on Fe--B sources under flowing N2 were investigated primarily at 1250--1400~∘C over nominal B contents of 1--10~wt\% to determine how rBN-related Raman character depends on growth condition and history. Spatially resolved Raman mapping across 44 growth conditions identified a restricted temperature--composition region in which the integrated rBN-related low-frequency response over 750--835~cm−1, A750−835, is strongly developed together with the integrated total response of the main ∼1367~cm−1 BN band, A1367total. In addition, the asymmetric high-wavenumber extension of the ∼1367~cm−1 band was quantified by subtracting a symmetric fitted core and integrating the far high-wavenumber residual, Thighfar. The independently defined A750−835 and Thighfar responses exhibit a strong correspondence across the full dataset, supporting their use as complementary rBN-related Raman observables. In contrast, A750−835/A1367total varies systematically among growth conditions, indicating that the relative prominence of the low-frequency response changes with temperature and composition rather than tracking the overall BN response through a fixed proportionality. Growth-duration experiments at 1350~∘C further show that this ratio also depends on high-temperature N2 dwell time, establishing growth history as an additional kinetic variable. Powder X-ray diffraction on selected products independently confirms the presence of rBN-related stacking, while second-harmonic generation provides complementary symmetry-sensitive evidence. These results define a processing window favorable for strong rBN-related Raman response and introduce a quantitative framework for tracking both the low-frequency and band-asymmetry signatures associated with rBN-related BN structure.
Related
- Supra-oscillatory critical temperature dependence of Nb-Ho bilayers
- Temperature dependence of the Casimir pressure on two graphene sheets placed on a substrate
- Temperature dependence of the Casimir force between plane-layered structures: an approach based on the principle of argument
- Parameter dependence of the mapping of the mean-field Ising model onto QCD in the first-order phase transition regime
- Explicit Solvents Reverse Temperature Dependence of Phase Behavior in Charged Fluids
BibTeX
@misc{kim2026temperaturecomposition,
title = {{Temperature--Composition Mapping and Growth-History Dependence of rBN-Related Raman Responses in BN Grown on Fe--B under Flowing N$_2$}},
author = {Donghoi Kim and Ayoung Cho and Kyeongho Park and Young Duck Kim and Chinkyo Kim},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.02693},
eprint = {2610.02693},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.02693},
}
RIS
TY - UNPB
TI - Temperature--Composition Mapping and Growth-History Dependence of rBN-Related Raman Responses in BN Grown on Fe--B under Flowing N_2
AU - Donghoi Kim
AU - Ayoung Cho
AU - Kyeongho Park
AU - Young Duck Kim
AU - Chinkyo Kim
PY - 2026
DA - 2026/10/02
PB - arXiv
DO - 10.48550/arxiv.2610.02693
UR - https://arxiv.org/abs/2610.02693
AB - BN products formed on Fe--B sources under flowing N_2 were investigated primarily at 1250--1400~^∘C over nominal B contents of 1--10~wt\% to determine how rBN-related Raman character depends on growth condition and history. Spatially resolved Raman mapping across 44 growth conditions identified a restricted temperature--composition region in which the integrated rBN-related low-frequency response over 750--835~cm^−1, A_750−835, is strongly developed together with the integrated total response of the main ∼1367~cm^−1 BN band, A_1367^total. In addition, the asymmetric high-wavenumber extension of the ∼1367~cm^−1 band was quantified by subtracting a symmetric fitted core and integrating the far high-wavenumber residual, T_high^far. The independently defined A_750−835 and T_high^far responses exhibit a strong correspondence across the full dataset, supporting their use as complementary rBN-related Raman observables. In contrast, A_750−835/A_1367^total varies systematically among growth conditions, indicating that the relative prominence of the low-frequency response changes with temperature and composition rather than tracking the overall BN response through a fixed proportionality. Growth-duration experiments at 1350~^∘C further show that this ratio also depends on high-temperature N_2 dwell time, establishing growth history as an additional kinetic variable. Powder X-ray diffraction on selected products independently confirms the presence of rBN-related stacking, while second-harmonic generation provides complementary symmetry-sensitive evidence. These results define a processing window favorable for strong rBN-related Raman response and introduce a quantitative framework for tracking both the low-frequency and band-asymmetry signatures associated with rBN-related BN structure.
ER -