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PreprintarXiv licencearXiv

Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage

  • S. A. Rozhkov
  • D. A. Kustov
  • V. V. Bakin
  • V. S. Khoroshilov
  • V. L. Alperovich
  • O. E. Tereshchenko
  • H. E. Scheibler
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Abstract

The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.

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Cite

BibTeXRIS
BibTeX
@misc{rozhkov2026electron,
  title = {{Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage}},
  author = {S. A. Rozhkov and D. A. Kustov and V. V. Bakin and V. S. Khoroshilov and V. L. Alperovich and O. E. Tereshchenko and H. E. Scheibler},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2607.18420},
  eprint = {2607.18420},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2607.18420},
}
RIS
TY  - UNPB
TI  - Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage
AU  - S. A. Rozhkov
AU  - D. A. Kustov
AU  - V. V. Bakin
AU  - V. S. Khoroshilov
AU  - V. L. Alperovich
AU  - O. E. Tereshchenko
AU  - H. E. Scheibler
PY  - 2026
DA  - 2026/09/16
PB  - arXiv
DO  - 10.48550/arxiv.2607.18420
UR  - https://arxiv.org/abs/2607.18420
AB  - The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.
ER  -