Metastable defects in III-Nitrides
Abstract
Metastable states in III-nitrides (AlN, GaN, InN and their alloys) are an important topic across materials science, device physics, and epitaxial growth because these compounds exhibit multiple competing crystal structures, defect configurations, and phase behaviors that strongly affect optical, electrical, and mechanical properties. The paper is a concise, structured review-style summary covering the main concepts, mechanisms, experimental signatures, theoretical approaches, and device implications. Actions that should be proposed to avoid effect of metastable defects in III-Nitride based devices are discussed. Avoiding metastable defect effects in III nitride devices requires preventing their formation (through growth and doping control), stabilizing their electronic configuration (by annealing or optical activation), and designing device architectures that minimize field- or temperature induced transitions. These combined actions ensure consistent carrier density, higher mobility, and superior optical and electrical reliability in GaN , AlGaN , and InGaN based devices.
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BibTeX
@misc{belyaev2026metastable,
title = {{Metastable defects in III-Nitrides}},
author = {A. E. Belyaev},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.00835},
eprint = {2609.00835},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.00835},
}
RIS
TY - UNPB
TI - Metastable defects in III-Nitrides
AU - A. E. Belyaev
PY - 2026
DA - 2026/09/01
PB - arXiv
DO - 10.48550/arxiv.2609.00835
UR - https://arxiv.org/abs/2609.00835
AB - Metastable states in III-nitrides (AlN, GaN, InN and their alloys) are an important topic across materials science, device physics, and epitaxial growth because these compounds exhibit multiple competing crystal structures, defect configurations, and phase behaviors that strongly affect optical, electrical, and mechanical properties. The paper is a concise, structured review-style summary covering the main concepts, mechanisms, experimental signatures, theoretical approaches, and device implications. Actions that should be proposed to avoid effect of metastable defects in III-Nitride based devices are discussed. Avoiding metastable defect effects in III nitride devices requires preventing their formation (through growth and doping control), stabilizing their electronic configuration (by annealing or optical activation), and designing device architectures that minimize field- or temperature induced transitions. These combined actions ensure consistent carrier density, higher mobility, and superior optical and electrical reliability in GaN , AlGaN , and InGaN based devices.
ER -