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Peer-reviewedCC BYAIP Advances

Behavior of radiation-induced defects in GaInAsP solar cells under heat light soaking

  • T. Nakamura1
  • Y. Shoji2
  • S.-i. Sato3
  • S. Yamasaki3
  • N. Nagasawa3
  • T. Ohshima4
  • R. Oshima2
  • T. Sugaya2
4 affiliations
  1. 11Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305-8505, Japan
  2. 22National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
  3. 33National Institutes for Quantum Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
  4. 43National Institutes for Quantum Science and Technology (QST), Takasaki, Gunma 370-1292, Japan4Department of Materials Science, Tohoku University, Aoba, Sendai, Miyagi 980-8579, Japan
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Abstract

To evaluate the compatibility of 1.5 eV Ga0.9In0.1As0.85P0.15 solar cells with the space environment, we investigated their radiation degradation characteristics and examined the behavior of the resulting defects under heat light soaking (HLS). The open-circuit voltage (Voc) of Ga0.9In0.1As0.85P0.15 solar cells was initially higher than that of GaAs solar cells; however, this relationship reversed following irradiation with 1 MeV electrons at a fluence of 3 × 1014 cm−2. On the other hand, only the Voc of Ga0.9In0.1As0.85P0.15 solar cells recovered after HLS and eventually surpassed that of GaAs solar cells. Light soaking improved the defect recovery rate and reduced the activation energy of defect recovery in Ga0.9In0.1As0.85P0.15 solar cells, suggesting that light soaking accelerates the defect recovery phenomenon that occurs under dark conditions. Furthermore, by performing HLS while varying the operating point of the solar cell, we clarified that the extent of recovery is determined by the density of recombination carriers in the solar cell. We discuss the overall radiation resistance of Ga0.9In0.1As0.85P0.15 solar cells, including their recovery phenomenon in the orbital environment.

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Cite

BibTeXRIS
BibTeX
@article{nakamura2026behavior,
  title = {{Behavior of radiation-induced defects in GaInAsP solar cells under heat light soaking}},
  author = {T. Nakamura and Y. Shoji and S.-i. Sato and S. Yamasaki and N. Nagasawa and T. Ohshima and R. Oshima and T. Sugaya},
  journal = {AIP Advances},
  year = {2026},
  month = oct,
  doi = {10.1063/5.0267208},
  url = {https://doi.org/10.1063/5.0267208},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Behavior of radiation-induced defects in GaInAsP solar cells under heat light soaking
AU  - T. Nakamura
AU  - Y. Shoji
AU  - S.-i. Sato
AU  - S. Yamasaki
AU  - N. Nagasawa
AU  - T. Ohshima
AU  - R. Oshima
AU  - T. Sugaya
PY  - 2026
DA  - 2026/10/23
JO  - AIP Advances
DO  - 10.1063/5.0267208
UR  - https://doi.org/10.1063/5.0267208
AB  - To evaluate the compatibility of 1.5 eV Ga0.9In0.1As0.85P0.15 solar cells with the space environment, we investigated their radiation degradation characteristics and examined the behavior of the resulting defects under heat light soaking (HLS). The open-circuit voltage (Voc) of Ga0.9In0.1As0.85P0.15 solar cells was initially higher than that of GaAs solar cells; however, this relationship reversed following irradiation with 1 MeV electrons at a fluence of 3 × 1014 cm−2. On the other hand, only the Voc of Ga0.9In0.1As0.85P0.15 solar cells recovered after HLS and eventually surpassed that of GaAs solar cells. Light soaking improved the defect recovery rate and reduced the activation energy of defect recovery in Ga0.9In0.1As0.85P0.15 solar cells, suggesting that light soaking accelerates the defect recovery phenomenon that occurs under dark conditions. Furthermore, by performing HLS while varying the operating point of the solar cell, we clarified that the extent of recovery is determined by the density of recombination carriers in the solar cell. We discuss the overall radiation resistance of Ga0.9In0.1As0.85P0.15 solar cells, including their recovery phenomenon in the orbital environment.
SN  - 2158-3226
ER  -