Synergistic Energetic Realignment and Interfacial Passivation via Perovskite Nanocrystal-Doped Spiro-OMeTAD for Efficient Planar Perovskite Solar Cells
- 1Centre for Nano Science and Engineering (CeNSE
- 2Indian Institute of Science (IISc
Abstract
Non-radiative recombination at the perovskite/hole transport layer (HTL) interface fundamentally constrains the open-circuit voltage (Voc) and charge-collection efficiency of planar perovskite solar cells. In this work, we report an effective interface engineering strategy of incorporating MAPb (IxBr1-x)3 nanocrystals (NC) into a Spiro-OMeTAD matrix which is used as HTL. Consequently, planar n-i-p devices incorporating the composite HTL deliver an enhanced power conversion efficiency of 20.31 %, highlighted by a surge in πππ (up to 1.1 V) alongside stable photocurrent density of 24.62 mA cm β2 . Electrochemical impedance spectroscopy (EIS) reveals that NC incorporation results in reduced bulk resistance of the Spiro-OMeTAD layer. Furthermore, systematic analysis of the characteristic time constant extracted from EIS measurements provides evidence of halide-ion redistribution which modulate the interfacial energetics and enhance the built-in electric field, thereby contributing to the observed improvement in PCE. This work highlights the potential of nanocrystal-engineered HTLs as an effective approach for potential suppression of interfacial recombination and developing defectpassivated, high-voltage perovskite solar cells.
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BibTeX
@misc{rout2026synergistic,
title = {{Synergistic Energetic Realignment and Interfacial Passivation via Perovskite Nanocrystal-Doped Spiro-OMeTAD for Efficient Planar Perovskite Solar Cells}},
author = {Poyoja Rout and Deepika Jangid and Sarang Mashale and Chaya Karkera and Avari Roy and Laxman Gouda and Aditya Sadhanala},
howpublished = {ChemRxiv},
year = {2026},
month = aug,
doi = {10.26434/chemrxiv.15008059/v1},
url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008059/v1},
note = {CC BY},
}
RIS
TY - UNPB
TI - Synergistic Energetic Realignment and Interfacial Passivation via Perovskite Nanocrystal-Doped Spiro-OMeTAD for Efficient Planar Perovskite Solar Cells
AU - Poyoja Rout
AU - Deepika Jangid
AU - Sarang Mashale
AU - Chaya Karkera
AU - Avari Roy
AU - Laxman Gouda
AU - Aditya Sadhanala
PY - 2026
DA - 2026/08/31
PB - ChemRxiv
DO - 10.26434/chemrxiv.15008059/v1
UR - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008059/v1
AB - Non-radiative recombination at the perovskite/hole transport layer (HTL) interface fundamentally constrains the open-circuit voltage (Voc) and charge-collection efficiency of planar perovskite solar cells. In this work, we report an effective interface engineering strategy of incorporating MAPb (IxBr1-x)3 nanocrystals (NC) into a Spiro-OMeTAD matrix which is used as HTL. Consequently, planar n-i-p devices incorporating the composite HTL deliver an enhanced power conversion efficiency of 20.31 %, highlighted by a surge in πππ (up to 1.1 V) alongside stable photocurrent density of 24.62 mA cm β2 . Electrochemical impedance spectroscopy (EIS) reveals that NC incorporation results in reduced bulk resistance of the Spiro-OMeTAD layer. Furthermore, systematic analysis of the characteristic time constant extracted from EIS measurements provides evidence of halide-ion redistribution which modulate the interfacial energetics and enhance the built-in electric field, thereby contributing to the observed improvement in PCE. This work highlights the potential of nanocrystal-engineered HTLs as an effective approach for potential suppression of interfacial recombination and developing defectpassivated, high-voltage perovskite solar cells.
ER -