Theory of resonance Raman profiles in transition metal dichalcogenide monolayers: Interference effects due to inter-valley phonon scattering
Abstract
The optical properties of monolayer transition metal dichalcogenides (TMDCs) are strongly impacted by exciton-phonon coupling, especially inter-valley scattering in the case of tungsten-based materials. Together with strain-tunability of the energetic K-Q valley separation this material class therefore provides a platform for semiconductor optomechanics. Here we investigate the influence of inter-valley scattering and strain on resonance Raman scattering in monolayer TMDCs using a microscopic model based on an effective deformation potential coupling for the exciton-phonon interaction. Considering exemplarily the resonance Raman profile of the A1-mode in hBN-encapsulated monolayer WSe2, we find that inter-valley scattering between the electronic K- and Q-valley leads to destructive interference between a first order and a third order Raman process. As a result we obtain a suppression of the incoming resonance in WSe2, consistent with recently published experimental data.
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BibTeX
@misc{groll2026theory,
title = {{Theory of resonance Raman profiles in transition metal dichalcogenide monolayers: Interference effects due to inter-valley phonon scattering}},
author = {Daniel Groll and Daniel Wigger and Tilmann Kuhn},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.07316},
eprint = {2610.07316},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.07316},
}
RIS
TY - UNPB
TI - Theory of resonance Raman profiles in transition metal dichalcogenide monolayers: Interference effects due to inter-valley phonon scattering
AU - Daniel Groll
AU - Daniel Wigger
AU - Tilmann Kuhn
PY - 2026
DA - 2026/10/05
PB - arXiv
DO - 10.48550/arxiv.2610.07316
UR - https://arxiv.org/abs/2610.07316
AB - The optical properties of monolayer transition metal dichalcogenides (TMDCs) are strongly impacted by exciton-phonon coupling, especially inter-valley scattering in the case of tungsten-based materials. Together with strain-tunability of the energetic K-Q valley separation this material class therefore provides a platform for semiconductor optomechanics. Here we investigate the influence of inter-valley scattering and strain on resonance Raman scattering in monolayer TMDCs using a microscopic model based on an effective deformation potential coupling for the exciton-phonon interaction. Considering exemplarily the resonance Raman profile of the A_1-mode in hBN-encapsulated monolayer WSe_2, we find that inter-valley scattering between the electronic K- and Q-valley leads to destructive interference between a first order and a third order Raman process. As a result we obtain a suppression of the incoming resonance in WSe_2, consistent with recently published experimental data.
ER -