A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage
Abstract
This letter proposes a 20-kV 4H-SiC optical-injection-enhanced reverse-conducting IGBT (OIE-RC-IGBT) with snapback-free operation and low on-state voltage. Light-emitting diodes (LEDs) are integrated into the gate structure to provide optical injection during forward conduction. The emitted light generates a high concentration of photogenerated carriers in the carrier-storage layer (CSL) and drift region, thereby reducing the resistance of the JFET and drift regions and increasing the device current. Consequently, the collector-side P+/N junction is turned on earlier, effectively suppressing the snapback effect and facilitating the transition to bipolar conduction. After bipolar conduction is established, the photogenerated carriers further enhance conductivity modulation, resulting in a reduced on-state voltage. TCAD simulation results show that, compared with the conventional RC-IGBT (C-RC-IGBT), the proposed device achieves snapback-free operation while reducing the required number of MOS cells from 25 to 5. Moreover, the on-state voltage, turn-off fall time, and turn-off energy loss are reduced by 22.37%, 25.06%, and 19.69%, respectively. These results demonstrate the potential of optical injection for improving the conduction and turn-off performance of ultrahigh-voltage SiC RC-IGBTs.
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BibTeX
@misc{chen202620kv,
title = {{A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage}},
author = {Yujian Chen and Guoliang Zhang and Ruijun Zhang and Liangxun Yue and Zhanwei Shen and Feng Zhang and Rong Zhang},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.32437},
eprint = {2609.32437},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.32437},
}
RIS
TY - UNPB
TI - A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage
AU - Yujian Chen
AU - Guoliang Zhang
AU - Ruijun Zhang
AU - Liangxun Yue
AU - Zhanwei Shen
AU - Feng Zhang
AU - Rong Zhang
PY - 2026
DA - 2026/09/26
PB - arXiv
DO - 10.48550/arxiv.2609.32437
UR - https://arxiv.org/abs/2609.32437
AB - This letter proposes a 20-kV 4H-SiC optical-injection-enhanced reverse-conducting IGBT (OIE-RC-IGBT) with snapback-free operation and low on-state voltage. Light-emitting diodes (LEDs) are integrated into the gate structure to provide optical injection during forward conduction. The emitted light generates a high concentration of photogenerated carriers in the carrier-storage layer (CSL) and drift region, thereby reducing the resistance of the JFET and drift regions and increasing the device current. Consequently, the collector-side P+/N junction is turned on earlier, effectively suppressing the snapback effect and facilitating the transition to bipolar conduction. After bipolar conduction is established, the photogenerated carriers further enhance conductivity modulation, resulting in a reduced on-state voltage. TCAD simulation results show that, compared with the conventional RC-IGBT (C-RC-IGBT), the proposed device achieves snapback-free operation while reducing the required number of MOS cells from 25 to 5. Moreover, the on-state voltage, turn-off fall time, and turn-off energy loss are reduced by 22.37%, 25.06%, and 19.69%, respectively. These results demonstrate the potential of optical injection for improving the conduction and turn-off performance of ultrahigh-voltage SiC RC-IGBTs.
ER -