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Peer-reviewedCC BY 4.0Advanced Science

Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond

  • Ilia Chuprina1
  • Gergő Thiering2
  • Emilie Bourgeois3
  • Anna Ermakova4,5
  • Dmitry Budker6,7,8,9
  • Adam Gali2,10,11
  • Milos Nesladek3,4,12
  • Petr Siyushev1,3,4
  • Fedor Jelezko1,13
13 affiliations
  1. 1Institute for Quantum Optics Ulm University Ulm Germany
  2. 2HUN‐REN Wigner Research Centre for Physics Budapest Hungary
  3. 3IMOMEC division IMEC Diepenbeek Belgium
  4. 4Institute for Materials Research (IMO) Hasselt University Diepenbeek Belgium
  5. 5Royal Belgian Institute for Space Aeronomy (BIRA‐IASB) Brussels Belgium
  6. 6Helmholtz‐Institut Mainz Mainz Germany
  7. 7Johannes Gutenberg‐Universität Mainz Mainz Germany
  8. 8GSI Helmholtzzentrum für Schwerionenforschung GmbH Darmstadt Germany
  9. 9Department of Physics University of California Berkeley USA
  10. 10Department of Atomic Physics Institute of Physics Budapest University of Technology and Economics Budapest Hungary
  11. 11MTA–WFK Lendület “Momentum” Semiconductor Nanostructures Research Group Budapest Hungary
  12. 12Department of Biomedical Technology Faculty of Biomedical Engineering Czech Technical University in Prague Kladno Czech Republic
  13. 13Center for Integrated Quantum Science and Technology (IQST) Ulm Germany
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Abstract

The investigation of optically active point defects in wide‐bandgap semiconductors is driven by the development of solid‐state quantum technologies. Such atom‐like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well‐established defects with predictable properties remains challenging, as the local environment and complex charge dynamics limit their performance and applicability. Furthermore, not all defects are optically accessible, which hinders our ability to study them. Here, we use the photoelectric detection technique to study switching and control of desired double and single charge states of silicon vacancy (SiV) defect in diamond. We demonstrate the first direct imaging of the dark charge state of SiV, which cannot be addressed by optical methods or electron paramagnetic resonance. We discuss a model for SiV charge state conversion involving proximal substitutional nitrogen defects. These findings are important for the charge state control of the entire family of group‐IV defects in diamond.

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Cite

BibTeXRIS
BibTeX
@article{chuprina2026photoelectric,
  title = {{Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond}},
  author = {Ilia Chuprina and Gergő Thiering and Emilie Bourgeois and Anna Ermakova and Dmitry Budker and Adam Gali and Milos Nesladek and Petr Siyushev and Fedor Jelezko},
  journal = {Advanced Science},
  year = {2026},
  month = aug,
  doi = {10.1002/advs.76933},
  url = {https://doi.org/10.1002/advs.76933},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond
AU  - Ilia Chuprina
AU  - Gergő Thiering
AU  - Emilie Bourgeois
AU  - Anna Ermakova
AU  - Dmitry Budker
AU  - Adam Gali
AU  - Milos Nesladek
AU  - Petr Siyushev
AU  - Fedor Jelezko
PY  - 2026
DA  - 2026/08/06
JO  - Advanced Science
DO  - 10.1002/advs.76933
UR  - https://doi.org/10.1002/advs.76933
AB  - The investigation of optically active point defects in wide‐bandgap semiconductors is driven by the development of solid‐state quantum technologies. Such atom‐like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well‐established defects with predictable properties remains challenging, as the local environment and complex charge dynamics limit their performance and applicability. Furthermore, not all defects are optically accessible, which hinders our ability to study them. Here, we use the photoelectric detection technique to study switching and control of desired double and single charge states of silicon vacancy (SiV) defect in diamond. We demonstrate the first direct imaging of the dark charge state of SiV, which cannot be addressed by optical methods or electron paramagnetic resonance. We discuss a model for SiV charge state conversion involving proximal substitutional nitrogen defects. These findings are important for the charge state control of the entire family of group‐IV defects in diamond.
SN  - 2198-3844
ER  -