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Peer-reviewedCC BY-NCRSC advances

Negative differential resistance in molecular junctions.

  • R Krishnapriya1
  • Abhishek S Shekhawat1
  • Gurpavit Kaur Bhatia1
  • Anu Gupta2
  • Lakshya Daukiya3
  • Tulika Srivastava4
  • Sandeep Munjal5
  • Anand M Shrivastav1
  • Rajesh Kumar6
  • Shailendra K Saxena1
6 affiliations
  1. 1Optics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India [email protected].
  2. 2Department of Chemical and Biological Physics, Weizmann Institute of Science Rehovot 7610001 Israel.
  3. 3Department of Physics, Central University of Rajasthan Ajmer 305817 India.
  4. 4Department of Electronics & Communication, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India.
  5. 5School of Cybersecurity and Digital Forensics, National Forensic Sciences University Gandhinagar Gujarat 382007 India.
  6. 6Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore Simrol 453552 India [email protected].
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Abstract

The occurrence of negative differential resistance (NDR) in the molecular junctions (MJs) is one of the fascinating phenomena in the field of molecular electronics (ME) characterized by a decrease in current with an increase in voltage. This inverse behaviour to Ohm's law gained prominence taking ME to the next generation, which includes neuromorphic computing, ultra-low power switches, high frequency oscillators, sensors and memory devices. This phenomenon in MJs is influenced by some key parameters, such as asymmetry in electrodes, coulomb blockade, charging effects, conformational changes in the molecules, redox reactions and the interface coupling (at molecule-electrode interface). This review covers the fundamental mechanisms of NDR and highlights several experimental and theoretical observations and finally discusses about the commercialization of NDR devices along with the challenges and future perspectives. By observing and understanding the advances of the NDR phenomenon, we can achieve the scalable, reproducible and stable NDR-based devices which enable us to step into the next generation of nanoelectronics devices.

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Cite

BibTeXRIS
BibTeX
@article{krishnapriya2026negative,
  title = {{Negative differential resistance in molecular junctions.}},
  author = {R Krishnapriya and Abhishek S Shekhawat and Gurpavit Kaur Bhatia and Anu Gupta and Lakshya Daukiya and Tulika Srivastava and Sandeep Munjal and Anand M Shrivastav and Rajesh Kumar and Shailendra K Saxena},
  journal = {RSC advances},
  year = {2026},
  month = oct,
  doi = {10.1039/d6ra06560k},
  url = {https://europepmc.org/article/MED/42904153},
  note = {CC BY-NC},
}
RIS
TY  - JOUR
TI  - Negative differential resistance in molecular junctions.
AU  - R Krishnapriya
AU  - Abhishek S Shekhawat
AU  - Gurpavit Kaur Bhatia
AU  - Anu Gupta
AU  - Lakshya Daukiya
AU  - Tulika Srivastava
AU  - Sandeep Munjal
AU  - Anand M Shrivastav
AU  - Rajesh Kumar
AU  - Shailendra K Saxena
PY  - 2026
DA  - 2026/10/20
JO  - RSC advances
DO  - 10.1039/d6ra06560k
UR  - https://europepmc.org/article/MED/42904153
AB  - The occurrence of negative differential resistance (NDR) in the molecular junctions (MJs) is one of the fascinating phenomena in the field of molecular electronics (ME) characterized by a decrease in current with an increase in voltage. This inverse behaviour to Ohm's law gained prominence taking ME to the next generation, which includes neuromorphic computing, ultra-low power switches, high frequency oscillators, sensors and memory devices. This phenomenon in MJs is influenced by some key parameters, such as asymmetry in electrodes, coulomb blockade, charging effects, conformational changes in the molecules, redox reactions and the interface coupling (at molecule-electrode interface). This review covers the fundamental mechanisms of NDR and highlights several experimental and theoretical observations and finally discusses about the commercialization of NDR devices along with the challenges and future perspectives. By observing and understanding the advances of the NDR phenomenon, we can achieve the scalable, reproducible and stable NDR-based devices which enable us to step into the next generation of nanoelectronics devices.
SN  - 2046-2069
ER  -