Magnetic Anisotropy and Magnetization Dynamics in Si/Ni Multilayers Probed by FMR and VSM Magnetometry
Abstract
The magnetic anisotropy and magnetization dynamics of sputtered [Si(40~Å)/Ni(tNi~Å)]20 multilayers were systematically investigated at room temperature using SQUID--VSM magnetometry and angle-dependent ferromagnetic resonance (FMR). Static measurements reveal soft ferromagnetic behaviour in thicker Ni layers and mixed ferromagnetic and superparamagnetic contributions at reduced thicknesses. The saturation magnetization increases toward the bulk Ni value with increasing thickness, consistent with Ni nanocrystallite growth. Magnetic dead-layer analysis yields an interfacial dead-layer thickness of approximately $9$~Å per interface, accounting for the suppressed magnetization in thinner Ni layers. Angle-dependent FMR measurements reveal effective easy-plane magnetic anisotropy, while out-of-plane spectra exhibit additional non-uniform spin-wave modes. The effective magnetization remains lower than the static saturation magnetization, indicating a perpendicular anisotropy contribution that partially compensates the demagnetizing field. Quantitative anisotropy analysis yields an interfacial anisotropy constant of KS = +0.17 erg cm−2, favouring perpendicular magnetization, and a volume anisotropy constant of KV = −1.23 × 106 erg cm−3, favouring in-plane alignment, with an extrapolated anisotropy crossover thickness of tc ≈ 27~Å. Increasing FMR line-shape asymmetry with decreasing Ni thickness is consistent with enhanced interfacial roughness. These findings highlight the competing interfacial and volume anisotropies and the importance of Ni thickness and interface quality in tailoring Si/Ni multilayers for silicon-compatible spintronic applications.
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BibTeX
@misc{singh2026magnetic,
title = {{Magnetic Anisotropy and Magnetization Dynamics in Si/Ni Multilayers Probed by FMR and VSM Magnetometry}},
author = {Dushyant Singh and Subha Maity and Tharundev V V and Subhavenkadesh SS and Vigneshwari SR and Krista R. Khiangte},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.32565},
eprint = {2610.32565},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.32565},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Magnetic Anisotropy and Magnetization Dynamics in Si/Ni Multilayers Probed by FMR and VSM Magnetometry
AU - Dushyant Singh
AU - Subha Maity
AU - Tharundev V V
AU - Subhavenkadesh SS
AU - Vigneshwari SR
AU - Krista R. Khiangte
PY - 2026
DA - 2026/10/23
PB - arXiv
DO - 10.48550/arxiv.2610.32565
UR - https://arxiv.org/abs/2610.32565
AB - The magnetic anisotropy and magnetization dynamics of sputtered [Si(40~Å)/Ni(t_Ni~Å)]_20 multilayers were systematically investigated at room temperature using SQUID--VSM magnetometry and angle-dependent ferromagnetic resonance (FMR). Static measurements reveal soft ferromagnetic behaviour in thicker Ni layers and mixed ferromagnetic and superparamagnetic contributions at reduced thicknesses. The saturation magnetization increases toward the bulk Ni value with increasing thickness, consistent with Ni nanocrystallite growth. Magnetic dead-layer analysis yields an interfacial dead-layer thickness of approximately $9$~Å per interface, accounting for the suppressed magnetization in thinner Ni layers. Angle-dependent FMR measurements reveal effective easy-plane magnetic anisotropy, while out-of-plane spectra exhibit additional non-uniform spin-wave modes. The effective magnetization remains lower than the static saturation magnetization, indicating a perpendicular anisotropy contribution that partially compensates the demagnetizing field. Quantitative anisotropy analysis yields an interfacial anisotropy constant of K_S = +0.17 erg cm^−2, favouring perpendicular magnetization, and a volume anisotropy constant of K_V = −1.23 × 10^6 erg cm^−3, favouring in-plane alignment, with an extrapolated anisotropy crossover thickness of t_c ≈ 27~Å. Increasing FMR line-shape asymmetry with decreasing Ni thickness is consistent with enhanced interfacial roughness. These findings highlight the competing interfacial and volume anisotropies and the importance of Ni thickness and interface quality in tailoring Si/Ni multilayers for silicon-compatible spintronic applications.
ER -