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Peer-reviewedCC BY-NC-ND 4.0Advanced Materials (Deerfield Beach, Fla.)

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

  • Hyeonwoo Lee1
  • Han Joo Lee2
  • Myeonggeun Choe1
  • Jeehong Park2
  • Yeonjin Yi2
  • Seongil Im2
  • Suk Hyun Park3
  • Hee Cheul Choi1
  • Ji Hoon Park3,4
  • Sarah S. Park5
5 affiliations
  1. 1Department of Chemistry Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea
  2. 2Van der Waals Materials Research Center Department of Physics Yonsei University Seodaemun‐gu Seoul Republic of Korea
  3. 3Department of Smart Green Technology Engineering Pukyong National University Busan Republic of Korea
  4. 4Department of Metallurgical Engineering Pukyong National University Busan Republic of Korea
  5. 5Department of Chemistry Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea
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Abstract

Conductive metal–organic frameworks (MOFs) have emerged as promising electronic materials, yet their integration as functional components in semiconductor devices remains limited by challenges in device‐level fabrication. Here, we demonstrate chemical vapor deposition (CVD)‐grown Cu3(C6O6)2 thin films, a highly conductive two‐dimensional (2D) MOF, as gate electrodes, enabled by their suitable work function and stable electronic structure. A sequential APS–Cr etching strategy enables high‐conformity patterning of MOF thin films fully compatible with standard photolithographic processes, while preserving the integrity of the underlying device layers. Field‐effect transistors were realized across three technologically relevant semiconductor platforms, including n‐type MoS2, p‐type MoTe2, and indium gallium zinc oxide (IGZO), demonstrating the generality of Cu3(C6O6)2 MOF as a gate electrode material. The resulting devices exhibit transfer characteristics and charge mobilities comparable to conventional metal gates in MoS2, while large‐area IGZO transistor arrays show uniform and highly reproducible electrical performance. These results establish conductive MOF thin films as viable gate materials and expand their potential toward source–drain electrodes and even channel materials, in next‐generation semiconductor devices.

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Cite

BibTeXRIS
BibTeX
@article{lee2026lithographycompatible,
  title = {{Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics}},
  author = {Hyeonwoo Lee and Han Joo Lee and Myeonggeun Choe and Jeehong Park and Yeonjin Yi and Seongil Im and Suk Hyun Park and Hee Cheul Choi and Ji Hoon Park and Sarah S. Park},
  journal = {Advanced Materials (Deerfield Beach, Fla.)},
  year = {2026},
  month = sep,
  doi = {10.1002/adma.75003},
  url = {https://doi.org/10.1002/adma.75003},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - JOUR
TI  - Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
AU  - Hyeonwoo Lee
AU  - Han Joo Lee
AU  - Myeonggeun Choe
AU  - Jeehong Park
AU  - Yeonjin Yi
AU  - Seongil Im
AU  - Suk Hyun Park
AU  - Hee Cheul Choi
AU  - Ji Hoon Park
AU  - Sarah S. Park
PY  - 2026
DA  - 2026/09/15
JO  - Advanced Materials (Deerfield Beach, Fla.)
DO  - 10.1002/adma.75003
UR  - https://doi.org/10.1002/adma.75003
AB  - Conductive metal–organic frameworks (MOFs) have emerged as promising electronic materials, yet their integration as functional components in semiconductor devices remains limited by challenges in device‐level fabrication. Here, we demonstrate chemical vapor deposition (CVD)‐grown Cu3(C6O6)2 thin films, a highly conductive two‐dimensional (2D) MOF, as gate electrodes, enabled by their suitable work function and stable electronic structure. A sequential APS–Cr etching strategy enables high‐conformity patterning of MOF thin films fully compatible with standard photolithographic processes, while preserving the integrity of the underlying device layers. Field‐effect transistors were realized across three technologically relevant semiconductor platforms, including n‐type MoS2, p‐type MoTe2, and indium gallium zinc oxide (IGZO), demonstrating the generality of Cu3(C6O6)2 MOF as a gate electrode material. The resulting devices exhibit transfer characteristics and charge mobilities comparable to conventional metal gates in MoS2, while large‐area IGZO transistor arrays show uniform and highly reproducible electrical performance. These results establish conductive MOF thin films as viable gate materials and expand their potential toward source–drain electrodes and even channel materials, in next‐generation semiconductor devices.
SN  - 0935-9648
SN  - 1521-4095
ER  -