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Peer-reviewedCC BYNature Communications

Two-dimensional pixel-level addressable mid-infrared metasurface spatial light modulator

  • Cosmin‐Constantin Popescu1
  • M.R.A. Peters1
  • Oleg Maksimov2
  • Harish B. Bhandari2
  • Rashi Sharma3
  • Kathleen A. Richardson3
  • Arka Majumdar4
  • Hyun Jung Kim5
  • Rui Chen1
  • Khoi Phuong Dao1
  • Luigi Ranno1
  • Brian Mills1,6
3 more authors
  • Dennis M. Callahan7
  • Tian Gu1,8
  • Juejun Hu9,10
10 affiliations
  1. 1Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
  2. 2Radiation Monitoring Devices, Inc., Watertown, MA, USA
  3. 3The College of Optics & Photonics, Department of Materials Science and Engineering, University of Central Florida, Orlando, FL, USA
  4. 4Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA
  5. 5The Department of Aerospace Engineering, KAIST, Daejeon, South Korea
  6. 6Draper Scholar Program, The Charles Stark Draper Laboratory, Inc., Cambridge, MA, USA
  7. 7The Charles Stark Draper Laboratory, Inc., Cambridge, MA, USA
  8. 8Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
  9. 9Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. [email protected]
  10. 10Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA. [email protected]
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Abstract

Active metasurfaces enable dynamic control of light for applications in beam steering, pixelated holography, and adaptive optics, but demonstrations of two-dimensional electrically addressable arrays have so far been limited. Here we introduce a scalable two-dimensional architecture based on phase-change materials integrated metasurfaces and apply it to realize the first transmissive mid-infrared amplitude-only spatial light modulator. The device is fabricated through standard silicon photonic foundry processing combined with backend-of-line integration and employs multilayer backend metal interconnects to implement a crossbar addressing scheme. Each pixel is integrated with a silicon diode selector to suppress sneak-path currents, a feature essential for scaling to large arrays. The result establishes a foundry-compatible route to high-density, large-area active metasurfaces with independently tunable pixels.

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Cite

BibTeXRIS
BibTeX
@article{popescu2026twodimensional,
  title = {{Two-dimensional pixel-level addressable mid-infrared metasurface spatial light modulator}},
  author = {Cosmin‐Constantin Popescu and M.R.A. Peters and Oleg Maksimov and Harish B. Bhandari and Rashi Sharma and Kathleen A. Richardson and Arka Majumdar and Hyun Jung Kim and Rui Chen and Khoi Phuong Dao and Luigi Ranno and Brian Mills and Dennis M. Callahan and Tian Gu and Juejun Hu},
  journal = {Nature Communications},
  year = {2026},
  month = jul,
  doi = {10.1038/s41467-026-75346-5},
  url = {https://doi.org/10.1038/s41467-026-75346-5},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Two-dimensional pixel-level addressable mid-infrared metasurface spatial light modulator
AU  - Cosmin‐Constantin Popescu
AU  - M.R.A. Peters
AU  - Oleg Maksimov
AU  - Harish B. Bhandari
AU  - Rashi Sharma
AU  - Kathleen A. Richardson
AU  - Arka Majumdar
AU  - Hyun Jung Kim
AU  - Rui Chen
AU  - Khoi Phuong Dao
AU  - Luigi Ranno
AU  - Brian Mills
AU  - Dennis M. Callahan
AU  - Tian Gu
AU  - Juejun Hu
PY  - 2026
DA  - 2026/07/07
JO  - Nature Communications
DO  - 10.1038/s41467-026-75346-5
UR  - https://doi.org/10.1038/s41467-026-75346-5
AB  - Active metasurfaces enable dynamic control of light for applications in beam steering, pixelated holography, and adaptive optics, but demonstrations of two-dimensional electrically addressable arrays have so far been limited. Here we introduce a scalable two-dimensional architecture based on phase-change materials integrated metasurfaces and apply it to realize the first transmissive mid-infrared amplitude-only spatial light modulator. The device is fabricated through standard silicon photonic foundry processing combined with backend-of-line integration and employs multilayer backend metal interconnects to implement a crossbar addressing scheme. Each pixel is integrated with a silicon diode selector to suppress sneak-path currents, a feature essential for scaling to large arrays. The result establishes a foundry-compatible route to high-density, large-area active metasurfaces with independently tunable pixels.
SN  - 2041-1723
ER  -