TiSi2 Phase Formation in Magnetron-Sputtered Ti Films on Silicon During Rapid Thermal Annealing
- 1School of Materials Science and Green Technologies, Kazakh-British Technical University, Tole bi 59, Almaty 050000, Kazakhstan
- 2Department of Mechanical and Aerospace Engineering, University of South Florida, 4202 E. Fowler Ave. ENG030, Tampa, FL 33620, USA
Abstract
Titanium thin films were deposited on crystalline silicon substrates by DC magnetron sputtering and annealed by rapid thermal processing under vacuum and nitrogen environments. X-ray diffraction, atomic force microscopy, and four-point probe measurements were used to evaluate phase formation and electrical properties. Annealing at 600 °C for 5 min in 10−3 Pa high vacuum produces the C54-TiSi2 phase, reducing sheet resistance from 56 Ω/sq to 1.94 Ω/sq. Lowering the synthesis temperature from 923 K to 873 K decreases radiative energy consumption by approximately 20%. In contrast, annealing in N2 atmosphere yields Ti5Si4 and TiN instead of TiSi2. A combined thermodynamic and diffusion model explains the observed phase selectivity under vacuum and nitrogen environments.
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BibTeX
@article{keiinbay2026tisi2,
title = {{TiSi2 Phase Formation in Magnetron-Sputtered Ti Films on Silicon During Rapid Thermal Annealing}},
author = {Symaiyl Keiinbay and Kair Kh. Nussupov and Nurzhan B. Beisenkhanov and Alex A. Volinsky},
journal = {Nanomaterials (Basel, Switzerland)},
year = {2026},
month = oct,
doi = {10.3390/nano16191258},
url = {https://europepmc.org/article/PMC/PMC13666645},
note = {CC BY},
}
RIS
TY - JOUR
TI - TiSi2 Phase Formation in Magnetron-Sputtered Ti Films on Silicon During Rapid Thermal Annealing
AU - Symaiyl Keiinbay
AU - Kair Kh. Nussupov
AU - Nurzhan B. Beisenkhanov
AU - Alex A. Volinsky
PY - 2026
DA - 2026/10/01
JO - Nanomaterials (Basel, Switzerland)
DO - 10.3390/nano16191258
UR - https://europepmc.org/article/PMC/PMC13666645
AB - Titanium thin films were deposited on crystalline silicon substrates by DC magnetron sputtering and annealed by rapid thermal processing under vacuum and nitrogen environments. X-ray diffraction, atomic force microscopy, and four-point probe measurements were used to evaluate phase formation and electrical properties. Annealing at 600 °C for 5 min in 10−3 Pa high vacuum produces the C54-TiSi2 phase, reducing sheet resistance from 56 Ω/sq to 1.94 Ω/sq. Lowering the synthesis temperature from 923 K to 873 K decreases radiative energy consumption by approximately 20%. In contrast, annealing in N2 atmosphere yields Ti5Si4 and TiN instead of TiSi2. A combined thermodynamic and diffusion model explains the observed phase selectivity under vacuum and nitrogen environments.
SN - 2079-4991
ER -